Part II- Theory of the Electrical Conduction (NOTES 1-2)

I- Introduction to Transport Models
1- Hierarchy of Transport Models
2- Carrier Transport: Basics
II- Drift-Diffusion Equations
1- Drift
a- Carrier Drift, b- Drift Current, c- Mobility, d- Resistivity, e- Band Bending
2- Diffusion
a- Carrier Diffusion, b- Diffusion Current
3- Total Current
4- Einstein Relationships

Part III- Device Operations

 I- P-N junctions (NOTES-1) (NOTES-2)
1- Introduction
2- Built-in potential
a- Basic, b- Energy band diagram
3- Unbiased junction
a- Depletion approximation, b- Solution for electric field, c- Solution for the potential,
d- Dimension of the depletion region, e- Summary
4- Biased junction
a- Definition, b-Forward bias, c- Reverse bias
5- I-V Characteristics
a- General Considerations, b-Ideal diode, c- Deviation from ideality, d- Zener diodes, e- Narrow-based diodes
5- P-N junctions capacitance
a- Depletion capacitance, b-Diffusion capacitance

 II- MOS capacitor (NOTES)
1- Structure and Principle of Operations
a- Unbiased junction, b- Biased junction
2- Accumulation
3- Depletion
4- Inversion
5- Charges in the MOS structure
6- Threshold Voltage

III- MOSFET (NOTES)
1- Introduction
a- The role of the gate electrode, b- The role of the Drain electrode, c- MOSFET operations
2- MOSFET analysis
a- The linear model, b- The quadratic model, c- The bulk charge model, d- Conductance and Transconductance
3- Subthreshold current