Class Hours: M,W,F 10:10-11:00am in ELAB 325
Office Hours: M,W,F
11:10am-12:00 in Marcus 201C,
and backup: M,W.F
1:10pm-2:00pm in Marcus 201C
Part
II- Theory of the Electrical Conduction [notes]
I-
Introduction to Transport Models
1- Hierarchy of Transport Models
2- Carrier Transport: Basics
II-
Drift-Diffusion Equations
1- Drift
a- Carrier Drift, b- Drift Current,
c- Mobility, d- Resistivity, e- Band Bending
2- Diffusion
a- Carrier Diffusion, b- Diffusion
Current
3- Total Current
4- Einstein Relationships
III-
Transport Equations
1- Carrier density and
Poisson equation
2- Continuity equations
3- Carriers generation/recombination
a- Band to band process, b- SRH mechnism, c-Auger
recombination, d-Photogeneration
Part
III- Device Operations
I- P-N junctions [notes-1]
1- Introduction
2- Built-in potential
a- Basic, b- Energy band diagram
3- Unbiased junction
a- Depletion approximation, b-
Solution for electric field, c- Solution for the potential,
d- Dimension of the depletion region, e- Summary
4- Biased junction
a- Definition, b-Forward bias, c-
Reverse bias
5- I-V Characteristics
a- General Considerations, b-Ideal
diode, c- Deviation from ideality, d- Zener diodes, e- Narrow-based
diodes
5- P-N junctions capacitance
a- Depletion capacitance, b-Diffusion
capacitance
II- MOS capacitor
1- Structure and Principle of Operations
a- Unbiased junction, b- Biased
junction
2- Accumulation
3- Depletion
4- Inversion
5- Charges in the MOS structure
6- Threshold Voltage
III- MOSFET
1- Introduction
a- The role of the gate electrode, b-
The role of the Drain electrode, c- MOSFET operations
2- MOSFET analysis
a- The linear model, b- The quadratic
model, c- The bulk charge model, d- Conductance and Transconductance
3- Subthreshold current