ECE609 Semiconductor Devices (Spring 2009)

Professor Eric Polizzi


    Class Hours: M,W,F 10:10-11:00am in ELAB 325

    Office Hours: M,W,F 11:10am-12:00 in Marcus 201C,
    and backup: M,W.F 1:10pm-2:00pm in Marcus 201C

Syllabus


Homework
Hw1-
Solution
Hw2 (optional)-
Hw3-

Quiz 
Quiz1-
Solution
Quiz2- March 27

Outline
Part I- From Atoms to Semiconductors [notes-1] [notes-2] [notes-3] [notes-4]

I- Introduction
1- Light
a- Blackbody radiation, b- Photoelectric effect
2- Electron
a- The Bohr atom, b- De-Broglie hypothesis, c- Consequences of duality wave-particle, d- Quantum effects
3- Solution of the Schrodinger equation in 1D
[add-notes]
a- free electron, b- infinite quantum well, c- potential wall

II- Semiconductor: Definitions
1- From One to Many Atoms
a- One electron system (H atom) , b- Many electrons system (Si atom), c- Two-atoms system, d- Many-atoms system
2- Energy Band Model
a- Valence band and Conduction band , b- Metal, Insulator or Semiconductor, c- Electrons and Holes in Semiconductors,
d- Intrinsic Semiconductors, e- Extrinsic Semiconductors
3- Bandstructures (Notions of)
a- Crystal structure , b- Effective mass approximation
4- Bandstructures (Complement)
a- Bloch theorem, b- Bandstructure calculations, c- Direct/Indirect Bandgap  [add-notes]

II- Semiconductor: Fundamentals
1- Carrier Densities: Basics
a- Definition , b- Density of states: definition, c- Distribution function d- Non-Degenerate semiconductors, e- carrier density calculations, f- Density of states: complement 
[add-notes]
2- Carrier Densities: Complement
a- Other expressions for n and p, b- How to calculate ni ?, c- Doped SC,  d- N-type and P-type SC, e- Where is Ei ?
f- Where is Ef ?, g- temperature dependence, h- Band bending



Part II- Theory of the Electrical Conduction [notes]

I- Introduction to Transport Models
1- Hierarchy of Transport Models
2- Carrier Transport: Basics

II- Drift-Diffusion Equations
1- Drift
a- Carrier Drift, b- Drift Current, c- Mobility, d- Resistivity, e- Band Bending
2- Diffusion
a- Carrier Diffusion, b- Diffusion Current
3- Total Current
4- Einstein Relationships

III- Transport Equations
1- Carrier density and Poisson equation
2- Continuity equations
3- Carriers generation/recombination
a- Band to band process, b- SRH mechnism, c-Auger recombination, d-Photogeneration


Part III- Device Operations

 I- P-N junctions [notes-1]
1- Introduction
2- Built-in potential
a- Basic, b- Energy band diagram
3- Unbiased junction
a- Depletion approximation, b- Solution for electric field, c- Solution for the potential,
d- Dimension of the depletion region, e- Summary

4- Biased junction
a- Definition, b-Forward bias, c- Reverse bias
5- I-V Characteristics
a- General Considerations, b-Ideal diode, c- Deviation from ideality, d- Zener diodes, e- Narrow-based diodes
5- P-N junctions capacitance
a- Depletion capacitance, b-Diffusion capacitance

 II- MOS capacitor
1- Structure and Principle of Operations
a- Unbiased junction, b- Biased junction
2- Accumulation
3- Depletion
4- Inversion
5- Charges in the MOS structure
6- Threshold Voltage


III- MOSFET
1- Introduction
a- The role of the gate electrode, b- The role of the Drain electrode, c- MOSFET operations
2- MOSFET analysis
a- The linear model, b- The quadratic model, c- The bulk charge model, d- Conductance and Transconductance
3- Subthreshold current