Chapter I- Physics of Semiconductors
I- Review of Quantum Mechanics
1- The crisis of classical mechanics
a- Blackbody radiation, b- Photoelectric effect, c- Hydrogen atom
2- Quantum mechanics: Fundamentals
a- Duality wave-particle, b- Schrodinger equation,
c- Solving Schrodinger equation, d- Crystal structure
II- Energy Band Theory
1- Intuitive approach
2- Analytical approach
a- The Kronig-Penney model, b- General case
3- Valence band and conduction band
4- Insulator, metal or semiconductor ?
5- Bandstructure of semiconductors
6- Electrons and holes in semiconductors
7- Effective mass approximation
III- Semiconductors Fundamentals
1- Carrier densities
a- Density of states, b- Distribution function, c- Carrier densities calculations
2- Intrinsic semiconductors
3- Extrinsic semiconductors
a- Donors and acceptors, b- N-type and P-type semiconductors, c- Additional comments
IV- Theory of Electrical Conduction
1- Hierarchy of transport models
2- Carrier transport: basics
3- Carrier drift
a- Mobility, b- Drift current, c- The Hall effect
4- Carrier diffusion
5- Drift-diffusion equation
a- Total current, b- Einstein relationships
6- Transport equations
a- Carrier density and Poisson equation, b- Continuity equations
7- Carrier generation and recombination
a- Classification, b- Band to band process, c- Trap-assisted process, d- Photogeneration

Chapter II- Two-Terminal Semiconductor Devices
I- P-N Junctions
1- Introduction
2- Unbiased junction
3- Biased junction
a- Introduction, b- Ideal diode, c- Deviation from ideality, d- Junction breakdown, e- Short-base diode
4- PN junction capacitance
II- Metal-Semiconductor Contacts
1- Schottky diode
a- Unbiased junction, b- Biased junction, c- Schottky effect
2- I-V Characteristics of the Schottky diode
a- Diffusion current, b- Thermionic current, c- Tunneling current
3- Additional comments for the Schottky contact
a- Influence of interface states, b- Comparison with the P-N junction
4- Ohmic contact
III- MOS Capacitors
1- Structure and principle of operation
a- 'Unbiased' junction, b- Biased junction
2- Accumulation
3- Depletion
4- Inversion
5- Threshold voltage
6- Summary
7- Quantum Effects
a- confinement effect, b- tunneling effect
IV- Heterojunctions
1- Unbiased junction
2- Biased junction
3- Application: 2DEG

Chapter III- Three-Terminal Semiconductor Devices
I- MOSFET
1- Introduction to MOSFET operation
2- MOSFET analysis
a- The linear model, b- The quadratic model, c- The variable depletion layer model, d- Influence of substrate bias
3- Surface mobility
4- Carrier velocity saturation
5- Subthreshold characteristics
a- Subthreshold current, b- Subthreshold slope
6- Continuous model
7- Channel length modulation
8- Short channel effect