Session 1: Technology CAD and Semiclassical Transport
Chairperson: S. Selberherr
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08:45am |
Device Physics Questions That I Always Wanted To Ask But Did Not Dare To
(Invited)
W. Hänsch
IBM Research, USA |
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09:15 |
Effect of band warping and wafer
orientation on nMOS mobility
under arbitrary applied stress
R. Kotlyar, C. Weber, L. Shrifen, S. Cea, M. D. Giles,
and M. Stettler
Intel Corporation, USA
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09:30 |
High Frequency Characteristics
of Discrete-Dopant
Fluctuations in Nanoscale MOSFET Circuits
C.-H. Hwang, T.-C. Yeh, H.-M. Huang, and Y. Li
National Chiao Tung University, Taiwan
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09:45 |
A fast k.p solver for hole
inversion layers
with an efficient 2D k-space discretization
A. T. Pham, C. Jungemann, and B. Meinerzhagen
TU Braunschweig, Germany
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10:00 |
Anisotropic dopant diffusion in
Si under stress using both continuum
and atomistic methods
I. Martin-Bragado, I. Avci, K. Sayed, V. Koltyzhenkov,
E. Lyumkis, and M. D. Johnson
Synopsys Inc., USA
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