IWCE12 - Program: Poster Session B

Quantum Transport Investigation of Different Structures of Shielded Channel DG-MOSFET: 2D Quantum Simulation (QT-1) Nima Dehdashti Akhavan and R. Faez Semnan University and Sarif University, Iran Density-Gradient Theory of Tunneling: Foundations, BCs and Verification (QT-2) M. G. Ancona and A. Svizhenko NRL and Silvaco, USA Hybrid models for 2D quantum transport (QT-3) N. Ben Abdallah, M. Mouis, C. Negulescu, N. Vauchelet, and F. Vecil MIP, IMEP, and LATP/CMI, France Coupling of Quantum and Electrothermal Effects in Semiconductor Device Simulation (QT-4) C. de Falco, J. W. Jerome, and R. Sacco Bergische Universitaet and Qimonda AG, Germany, Northwestern University, USA, and Politecnico di Milano, Italy Magnetic current in open coupled-dot arrays (QT-5) P. Drouvelis, G. Fagas, and P. Schmelcher Tyndall National Institute, Ireland, and Universitat Heidelberg, Germany Fullband Green's Function Study for Quantum Electron Transport in Strained Silicon n-MOSFETs (QT-6) H. Fitriawan, S. Souma, and M. Ogawa Kobe University, Japan Quantum Corrections and Thermal Conductivity to QHM in Silicon (QT-7) Garcia-B. V. Grimalsky, A. Silva, M. A. Flores-G., P. Rivera, and L. Morales Polytechnic University of Pachuca, Automomous State University and INAOE, Mexico Sharpened Aharanov-Bohm oscillations near resonance in a balanced ring with double quantum dots (QT-8) E. R. Hedin, A. M. Satanin, and Y. S. Joe Ball State University, USA, Institute for Physics of Microstructures, Russia Can Silicon FinFETs Satisfy ITRS Projections for High Performance 10 nm Devices? (QT-9) H. Khan, D. Mamaluy, and D. Vasileska Arizona State University, USA NEGF Simulation of the Effect of Strain on Scaled Double Gate nanoMOSFETs (QT-10) K. Kalna, A. Martinez, A. Svizhenko, M. P. Anantram, J. R. Barker, and A. Asenov University of Glasgow, UK, Silvaco, USA, University of Waterloo, Canada Basis Expansion Method for the Calculation of Ballistic Quantum Transport (QT-11) G. Mil'nokov, N. Mori, Y. Kamakura, and T. Ezaki Osaka University and Hiroshima University, Japan Atomistic Modeling of Hole Transport in Ultrathin Body SOI pMOSFETs (QT-12) H. Minari and N. Mori Osaka University, Japan Alternative Sparse Eigensolvers and Performance Optimization for Electronic Structure Simulations with NEMO-3D (QT-13) M. Naumov, S. Lee, B. Haley, R. Rahman, H. Ryu, F. Saied, S. Clark, and G.Klimeck Purdue University, USA Band Edge Alignment and Confined States in SiGe based Quantum Wells (QT-14) D. Rideau, Y. M. Niquet, S. Monfray, C. Tavernier, and H. Jaouin STMicroelectronics and CEA/DRFMC/FP2M/L_SIM, France Consistency of Boundary Conditions in Nonequilibrium Green's Function Simulations (QT-15) S. Sato, H. Kusaka, and N. Sano University of Tsukuba, Japan Calculation of Fin Width for Bulk Inversion in Si FinFETs by Applying Supersymmetry (QT-16) R. S. Shishir and D. K. Ferry Arizona State University, USA Drain-induced oscillations of gate leakage current in double-gate MOSFET using Green's function calculations (QT-17) Van-Nam Do and P. Dollfus University of Paris, France Nanotubes and Nanowires Density Functional Theory Mode Space Approach Applied to Silicon Nanowire FETs (NN-1) K. Alam, N. A. Bruque, and R. K. Lake University of California Riverside, USA Graphene Field-Effect Devices from a Drift-Diffusion Perspective (NN-2) M. G. Ancona NRL, USA Influence of Anisotropy and Nonparabolicity on Dispersion Relation of Quantum Wires (NN-3) F. M. Gómez-Campos, S. Rodriguez-Bolivar, and J. E. Carceller University of Granada, Spain Influence of Dimensionality on Quantum Transport in Nano-devices: 3D vs. 2D Modeling (NN-4) H. Khan, D. Mamaluy, and D. Vasileska Arizona State University, USA Electronic Structure and Transmission Characteristics of SiGe Nanowires (NN-5) Neerav Kharche, Mathieu Luisier, Timothy B. Boykin, and Gerhard Klimeck Purdue University, University of Alabama and Caltech, USA, and ETH, Switzerland Semiclassical transport in silicon nanowire FETs including surface roughness (NN-6) M. Lenzi, A. Gnudi, S. Reggiani, E. Gnani, M. Rudan, and G. Baccarani University of Bologna, Italy A Full 3D Non-Equilibrium Green Functions Study of a stray charge in a nanowire transistor (NN-7) Martinez, M. Bescond, A. R. Brown, J. R. Barker, and A. Asenov University of Glasgow, UK, and Ninatec INPG, France Simulation of nanowire transistors: Atomistic vs. Effective Mass Models (NN-8) N. Neophytou, A. Paul, M. S. Lundstrom, and G. Klimeck Purdue University, USA Simulation of Non-Equilibrium Electron Transport in Silicon Quantum Wires (NN-9) G. Ossig and F. Schurrer Graz University of Technology, Austria An EHT based atomistic model for Graphene Nanoelectronics (NN-10) H. Raza and E. Kan Cornell University, USA Effects of Multiple-Gates and Contacts in Nanowire and Nanotube Field Effect Transistors (NN-11) M. Shin Information and Communications University, Korea (Charged) excitons in freestanding nanowires (NN-12) A. F. Slachmuylders, B. Partoens, W. Magnus, and F. M. Peeters Universiteit Antwerpen and Interuniversity Microelectronics Centre, Belgium Analytical and self-consistent quantum mechanical model for a JFET nanowire (NN-13) B. Sorée, W. Magnus, and G. Pourtois IMEC, Belgium Ab-initio and Atomistic Methods Atomistic NEGF Simulations of Carbon Nano-Ribbons in Magnetic Fields (AI-1) Roksana Golizadeh-Mojarad, A.N.M. Zainuddin, Shaikh S. Ahmed, Gerhard Klimeck, and Supriyo Datta Purdue University, USA First Principle Study of Stress Effects on Indium Diffusion in Uniaxially Strained Silicon (AI-2) Y.-K. Kim, B.-G. Cho, S.-Y. Park, and T. Won Inha University and National IT Research Center for Computational Electronics Hierarchical simulation of transport in silicon nanowire transistors (AI-3) P. Marconcini, G. Fiori, M. Macucci, and G. Iannaccone University of Pisa, Italy KMC Study of Boron Diffusion in Silicon Substrate with Ge/Si Pre- Amorphization (AI-4) S.-Y. Park, B.-G. Cho, Y.-K. Kim, and T. Won Inha University, Korea A versatile and efficient atomistic transport model with elastic and inelastic dephasing (AI-5) H. Raza and E. Kan Cornell University, USA Efficient Modeling Techniques for Atomistic-Based Electronic Density Calculations (AI-6) D. Zhang and E. Polizzi University of Massachusetts Amherst, USA Optical Processes and Optoelectronic Devices Computational Analysis of Dark Current in Proton Irradiated PIN Photodiodes (OP-1) M.A. Cappelletti, A.P Cedola, E.L. peltzer y Blanca UNLP Buenos Aires, Argentina High Field Emission Efficiency Surface Conduction Electron Emitters (OP-2) H-Y Lo, Y. Li, C-H Tsai, H-Y Chao, and F-M Pan National Chiao Tung University, Taiwan Transmission Coefficients for Minibands Formed in Quantum Dot Arrays under Bias (OP-3) K. Sun, M. Dutta, and M. Stroscio University of Illinois Chicago, USA Optoelectronic Device Simulation: Continuum or Atomistic Methods? (OP-4) R. Veprek, S. Steiger, M. Luisier, and B. Witzigmann ETH Zurich, Switzerland Biological Systems Ion Permeation and Binding in Biomolecular Ion Pumps via Molecular Dynamics (BS-1) J. E. Fonseca, R. F. Rakowski, and S. Kaya Ohio University, USA Comparison of Calculated and Measured I-V Curves for DNA (BS-2) T. Inoue, Q. Jun, S. Liao, M. Dutta, and M. Stroscio University of Illinois Chicago, USA Physical Limits in Information Processing Magnetic Excitations for Information Processing (PL-1) G. Csaba, F. Peretti, and P. Lugli Technical University of Munich, Germany Quantum Dot Blinking: Physical Limit for Nanoscale Optoelectronic Device (PL-2) M. Dutta, D. Schonfeld, S. Liao, and M. Stroscio University of Illinois Chicago, USA Current and Information in the Microcanonical Picture of Nanoscale Transport (PL-3) I. Ercan and N.G. Anderson University of Massachusetts Amherst, USA