ECE 558 Introduction to VLSI Design

ECE 658 (NTU IC740-A) VLSI Design Principles

Lecture 5 (Fall 2006)

LECTURE SLIDES :- pdf

Current Events

Semiconductor Devices: A Quick Review for CMOS VLSI

• The MOS Transistor
• CMOS Technology
• Types of MOS Transistors
• Threshold Voltage
• I/V Relations
• Dynamic Behavior

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• Gate Capacitance
• Diffusion Capacitance
• Junction Capacitance

ISSUES

Which type of material is used for the source/drain diffusion material of a p-type transistor?

What material is used for the gate oxide?

What is meant by low-k dielectric?

What recent metallurgical advance has occured for VLSI interconnect?

What is meant by the term "saturated" in terms of MOSFET operation?

What is meant by the term "linear" in terms of MOSFET operation?

What is the impact of Vsb on the threshold voltage Vt? Why?

Why aren't we studying the bipolar transistor sections of the textbook?

SPICE (slides from Rabaey Chapter 2 starting with slide 36 (skip Bipolar))

Note that you need SPICE for these questions. For details on how to run SPICE, see VLSI TA web page

Coming up in next lecture

• The Wires