PUBLICATIONSPUBLICATIONS|
R. Basco, A. Prabhu, K. S. Yngvesson, K. M. Lau, "Monolithic Integration of AlGaAs/GaAs 2DEG 94GHz Mixers on Quartz Substrate by Epitaxial Lift-Off", IEEE Trans. Electron Devices, vol. ED-44, pp.11-16, 1997. F. Agahi, A. Baliga, K.M. Lau, and N.G. Anderson, "Dependence of Polarization Mode and Threshold Current on Tensile Strain in AlGaAs/GaAsP Quanutm Well Lasers", Solid State Electronics, vol. 41, pp. 647-649, 1997. A. Baliga, F. Agahi, N.G. Anderson, K.M. Lau, and S. Cadambi, "Tensile Strain and Threshold Currents in GaAsP-AlGaAs Single Quantum Well Lasers", IEEE J. Quantum Electronics, vol.QE-32, pp.29-37, 1996. F. Agahi, A. Baliga, K.M. Lau, and N.G. Anderson, "Tensile-Strained-Barrier GaAsP/GaAs Single Quantum Well Lasers", Appl. Phys. Lett., vol. 68, pp.3778-3780, 1996. C. R. Lutz, F. Agahi, and K.M. Lau, "Resonant Tunneling Injection Quantum Well Lasers", IEEE Photon. Technol. Lett., vol. PTL-7, pp. 596-598, June 1995. F. Agahi, K. M. Lau, H. K. Choi, A. Baliga, N. G. Anderson, "High-Performance AlGaAs/GaAsP Tensile-Strained Quantum-Well Laser Diodes", IEEE Photon. Technol. Lett., vol. PTL-7, pp. 140-143, Feb. 1995. F. Agahi, K. M. Lau, E. S. Koteles, A. Baliga, and N. G. Anderson, "GaAs1-xPx/GaAs Quantum Well Structures with Tensile-Strained Barriers", IEEE J. Quantum Electronics, vol.QE-30, pp.459-465, Feb 1994. F. Agahi, J.-X. Yang, K. M. Lau, and K. S. Yngvesson, "High Quality Two-Dimensional Electron Gas in AlGaAs/GaAs Heterostructures by LP-OMVPE", IEEE Trans. Electron Devices, vol. ED-40, p.502, 1993. W. Xu and K.M. Lau, "Optically Pumped Submillimeter Wave Semiconductor Lasers", IEEE J. Quantum Electronics, vol.QE-28, p.1773, 1992. J.C. Liou and K.M. Lau, "Analysis of Slow Wave Transmission Lines on Multi-layered Semiconductor Structures Including Conductor Loss", IEEE Trans. Microwave Theory Tech., vol. MTT-41, May, 1993. J. X. Yang, F. Agahi, D.Dai, C. Musante, W. Grammer, K.M. Lau, and K. S. Yngvesson, "Wide-Bandwidth Electron Bolometric Mixers: A 2-DEG Prototype and Potential for Low-Noise THz Receivers," IEEE Trans. Microwave Theory Tech., vol. MTT-41, p.581, 1993. |
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N. G. Anderson, F. Agahi, A. Baliga, and K.M. Lau, "Valence Band Offsets in Strained GaAs1-xPx/GaAs Heterostructures", IEEE/TMS J. Electronic Materials, vol. 24, p.713, 1995. R. Basco, F. Agahi, and K.M. Lau, "Ultra-High Mobility Two-Dimensional Electron Gas in AlGaAs/GaAs heterostructures by Organometallic Chemical Vopor Deposition", Appl. Phys. Lett., vol. 63, pp.1960-1962, Oct 1993. D.C. Bertolet, J.-K. Hsu, K.M. Lau, E.S. Koteles, "Effects of Growth Interruption on the Optical Properties of AlGaAs/GaAs and GaAs/InGaAs Quantum Wells Grown by AP-OMCVD", J. Electronic Materials, vol.20, p.197, 1991. S.H. Jones, L.K. Seidel, K.M. Lau, and M. Harold, "Patterned Substrate Epitaxy Surface Shapes", J. Crystal Growth, vol. 108, p. 73, 1991. E.S. Koteles, D.A. Owens, D.C. Bertolet, J.K. Hsu, and K.M. Lau, "Reversal of Light- and Heavy-Hole Valence Bands in Strained GaAsP/AlGaAs Quantum Wells", Surface Science, vol. 228, p.314, 1990. D.C. Bertolet, J.-K. Hsu, F. Agahi, and K.M. Lau, "Critical Thickness of GaAs/InGaAs and AlGaAs/GaAsP Strained Quantum Wells Grown by Organometallic Chemical Vopor Deposition", J. Electronic Materials, vol.19, p.967, 1990. D. C. Bertolet, J. K. Hsu, and K. M. Lau, "Tailoring of Hole Eigenenergies in Strained GaAsP/AlGaAs Single Quantum Wells Grown by Atmospheric Pressure OMCVD", Appl. Phys. Lett., vol. 53, p.2501, 1988. D. C. Bertolet, J. K. Hsu, K. M. Lau, E. S.
Koteles, and D. Owens, "Exciton Photoluminescence Linewidths
in Very Narrow AlGaAs/GaAs and GaAs/InGaAs Quantum Wells",
J. Appl. Phys., vol. |
