|
In-House built Organometallic Chemical Vapor Deposition (OMCVD) System showing the "Nitride Addition" and the reaction chamber cabinet. |
| The Mass Flow and Presure Controller Display Panel of the in-house built OMCVD System |
|
|
The reactor, with a 50mm inner diameter and a water cooling jacket, can ramp from room temperature up to 1350K in less than two minutes |
| Wafer Cleaning Station in the epitaxy lab |
|
|
The AIX 200/4 is a system for epitaxial growth of uniform layers of III-V semiconductors on wafers up to four inches in diameter. |
|
Applications: III-V Compounds on Gallium Arsenide and Indium Phosphide Substrates |
|
|
The AIX 200/4 Reactor including a quartz reactor outer tube, an inner tube, a down stream plate, a graphite susceptor body and a stainless steel gas inlet |
| This AIXTRON 200/4 System is computer-controlled by AIXTRON'S Windows based software, CACE (Computer Aided Control Environment). |
|
|
The AIXTOX Scrubbing System for exhaust gas detoxification. It absorbs toxic or corrosive substances, decontaminating to below 5ppb. |
| A researcher in the CSL group is operating the AIX 200/4 System |
|
|
Wafer Cleaning Station |
| Karl Suss MJB 3UV Submicron Mask Aligner |
|
|
An AMRAY 1810D Scanning Electron Microscope |
| Probe Station for device electrical testing |
|
|
Hewlett-Packard Capacitance-Voltage Characterization System |
| Optical Microscope with Video System |
|
|
Reactive Ion Etching System for dry-etching processes. |
| A Multi-Target Metallization System equipped with both RF and DC sputtering capability and a residual gas analyzer |
|
|
A Hot Stage for alloying ohmic contacts to compound semiconductors. This chamber is also equipped for pyrolytic silicon dioxide deposition. |
| The PC Controller for the Bede QC1 X-ray Diffractometer |
|
|
The Bede Double-Crystal X-ray Diffractometer Stage and Electronics Control Box |
| Bruker Fourier Transform Spectrometer for far-infrared to visible spectroscopy. |
|
|
Photoluminescence System with a 0.75 m spectrometer, for semiconductor material characterization measurements at room temperature, 77K and 4.2K |
