Class Hours: M,W,F 11:15-12:05am in ELAB 304
Office Hours (Eric
Polizzi): M,W,F 1:15pm-2:15pm in Marcus 201C
Office Hours (TA:
Sudarshan Narayanan): Tue, Thu 11:30am-12:30am in Marcus 214
Syllabus
Schedule
NEW DECEMBER SCHEDULE
Monday 1- class MOS- new HW5
Wednesday 3 -
class MOSFET
Friday 5 - Class MOSFET
Monday 8- class MOSFET- HW5 due
beginning of the class
Wednesday 11- class MOSFET -Superquiz
5
Friday 13- Review Session
for Final exam
EXAMS
Mid-term/SOLUTIONS
SCHEDULE
Interview Week
HOMEWORK
HW1 solution
HW2 solution
HW3 solution
HW4 solution
HW5
QUIZ
QUIZ1
QUIZ2
QUIZ3
QUIZ4
Class Notes
Part I- From Atoms to Semiconductors (NOTES 1) (NOTES 2) (NOTES
3) (NOTES
4)
I- Introduction
1- Light
a- Blackbody radiation,
b- Photoelectric effect
2- Electron
a- The Bohr atom,
b- De-Broglie hypothesis, c- Consequences of duality wave-particle, d-
Quantum effects
II- Semiconductor: Definitions
1- From One to Many Atoms
a- One electron system (H atom) ,
b- Many electrons system (Si atom), c- Two-atoms system, d- Many-atoms
system
2- Energy Band Model
a- Valence band and Conduction band ,
b- Metal, Insulator or Semiconductor, c- Electrons and Holes in
Semiconductors,
d- Intrinsic Semiconductors, e- Extrinsic Semiconductors
3- Bandstructures (Notions of)
a- Crystal structure ,
b- Effective mass approximation
II-
Semiconductor: Fundamentals
1- Carrier Densities: Basics
a- Definition ,
b- Density of states, c- Distribution function d- Non-Degenerate
semiconductors, e- carrier density calculations
1- Carrier Densities: Complement
a- Other expressions for n and p,
b- How to calculate ni ?, c- Doped SC, d- N-type and P-type SC,
e- Where is Ei ?
f- Where is Ef ?, g- temperature dependence, h- Band bending
Part
II- Theory of the Electrical Conduction (NOTES 1-2)
I-
Introduction to Transport Models
1- Hierarchy of Transport Models
2- Carrier Transport: Basics
II- Drift-Diffusion Equations
1- Drift
a- Carrier Drift, b- Drift Current,
c- Mobility, d- Resistivity, e- Band Bending
2- Diffusion
a- Carrier Diffusion, b- Diffusion
Current
3- Total Current
4- Einstein Relationships
Part
III- Device Operations
I- P-N junctions (NOTES-1) (NOTES-2)
1- Introduction
2- Built-in potential
a- Basic, b- Energy band diagram
3- Unbiased junction
a- Depletion approximation, b-
Solution for electric field, c- Solution for the potential,
d- Dimension of the depletion region, e- Summary
4- Biased junction
a- Definition, b-Forward bias, c-
Reverse bias
5- I-V Characteristics
a- General Considerations, b-Ideal
diode, c- Deviation from ideality, d- Zener diodes, e- Narrow-based
diodes
5- P-N junctions capacitance
a- Depletion capacitance, b-Diffusion
capacitance
II- MOS capacitor (NOTES)
1- Structure and Principle of Operations
a- Unbiased junction, b- Biased
junction
2- Accumulation
3- Depletion
4- Inversion
5- Charges in the MOS structure
6- Threshold Voltage
III- MOSFET (NOTES)