|Laboratory for Millimeter
Devices and Applications
inductors and capacitors in gate and drain circuits to switch between
2.4, 3.5, and
5.5 GHz bands. pHEMT process. designed by J. Shatzman
SiGe squarer for use
in a second harmonic injection system used to linearize a power
amplifier designed by H. Yu
|Combined PA and LNA
switched between transmit and receive by voltage supply to eliminate
switch. Operates at 10 GHz. CMOS process 180nM. Designed by
||Quadrature injection locked oscillator at 10 GHz in 180 nM CMOS. Combined with a passive IQ mixer. Designed by R. Johnson.|
| A vector gain
control for phase/gain control at low IF. Bi-directonal, 4
quadrant, 6 bits of resolution. Designed
by A. Mashayekhi.
||Class E HBT PA for a LIST Transmitter. Designed by J. Xavier.|
|A 35 GHz LNA and
Mixer using a 0.25 uM GaAs pHEMT. Designed by R.
A 22 GHz GaAs Flip Chip LNA. Designed by B. Hou.
|© 2011 University of Massachusetts Amherst. Site Policies.