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Laboratory for Millimeter
wave
Devices and Applications |
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Uses switched
inductors and capacitors in gate and drain circuits to switch between
2.4, 3.5, and
5.5 GHz bands. pHEMT process. designed by J. Shatzman |
SiGe squarer for use
in a second harmonic injection system used to linearize a power
amplifier designed by H. Yu |
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Combined PA and LNA
switched between transmit and receive by voltage supply to eliminate
switch. Operates at 10 GHz. CMOS process 180nM. Designed by
N. Khandelwal. |
Quadrature injection locked oscillator at 10 GHz in 180 nM CMOS. Combined with a passive IQ mixer. Designed by R. Johnson. |
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A vector gain
control for phase/gain control at low IF. Bi-directonal, 4
quadrant, 6 bits of resolution. Designed
by A. Mashayekhi. |
Class E HBT PA for a LIST Transmitter. Designed by J. Xavier. |
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A 35 GHz LNA and
Mixer using a 0.25 uM GaAs pHEMT. Designed by R.
Carrillo. |
A 22 GHz GaAs Flip Chip LNA. Designed by B. Hou. |
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