1. United States Patent US7,450,352, 2008, “Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers”, Y. A. Chang, and J. Joshua Yang.

2. United States Patent US7,579,042, 2009, Methods for the fabrication of thermally stable magnetic tunnel junctions”, Y. A. Chang, J. Joshua Yang and P. F. Ladwig.

3. United States Patent US7,985,962, 2011, “Memristive device”, A. M. Bratkovski, D. Ohlberg, J. Joshua Yang.

4. United States Patent, US8,093,575, 2011, “Memristive device with a bi-metallic electrode”, Q. Xia, X. Li, J. Joshua Yang.

5. United States Patent, US8,063,395, 2011, “Memristor amorphous metal alloy electrodes”, Q. Xia, J. Joshua Yang, S. Y. Wang.

6.  United States Patent US8,207,593, 2012, “Memristor having a nanostructure in the switching material” A. M. Bratkovski, J. Joshua Yang, Q. Xia.

7. United States Patent US8,203,171, 2012, “Defective graphene-based memristor” J. Joshua Yang, F. Miao, W. Wu, S.-Y. Wang, R. S. Williams.

8. United States Patent US8,207,520, 2012, “Programmable crosspoint device with an integral diode” J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

9. United States Patent US8,283,649, 2012, “Memristor with a non-planar substrate” A. M Bratkovski, S.-Y. Wang, J. Joshua Yang, M. Stuke.

10. United States Patent US8,264,868, 2012, “Memory array with metal-insulator transition switching devices” G. M. Ribeiro, Pickett, Matthew, J. Joshua Yang.

11. United States Patent US8,259,485, 2012, “Multilayer structures having memory elements with varied resistance of switching layers” J. Joshua Yang, J. P. Strachan, W. Wu.

12. United States Patent US8,294,132, 2012, “Graphene memristor having modulated graphene interlayer conduction” F. Miao, J. Joshua Yang, W. Wu, S.-Y. Wang, R. S. Williams.

13. United States Patent US8,226,3521, 2012, “Memristors with an electrode metal reservoir for dopants” J. Joshua Yang, W. Yi, M. Stuke, S.-Y. Wang.

14. United States Patent US8,225,8304, 2012, “Guided mode resonator based raman enhancement apparatus” W. Wu, Q. Xia, J. Li, J. Joshua Yang.

15. United States Patent US8,226,4724, 2012, “Changing a memristor state” F. Miao, J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

16. United States Patent USPTO US8,324,976 B2, 2012, “Oscillator circuitry having negative differential resistance” J. Borghetti, M. D. Pickett, G. Medelros-Ribeiro, W. Yi, J. Joshua Yang, M. Zhang.

17. United States Patent US8,385,101, 2013, “Memory resistor having plural different active materials” J. Joshua Yang, M. Zhang, R. S. Williams.

18. United States Patent USPTO US8,415,652, 2013, “Memristors with a switching layer comprising a composite of multiple phases” J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

19. United States Patent USPTO US8,437,172, 2013, “Decoders using memristive switches” M.Fiorentino, W. M. Tong, P. J. Kuekes, J. Joshua Yang.

20. United States Patent USPTO US8,437,072, 2013, “Individually addressable nano mechanical actuator and contact switch by redox reaction in a crossbar array” J. Joshua Yang, R. S. Williams, W. M. Tong.

21. United States Patent USPTO US8,450,711, 2013, “Semiconductor memristor devices” R. S. Williams, J. Joshua Yang, D. R. Stewart.

22. United States Patent USPTO US8,455,852, 2013, “Controlled placement of dopants in memristor active regions” N. J. Quitoriano, P. J. Kuekes, J. Joshua Yang.

23. United States Patent USPTO US8,487,289, 2013, “Electrically actuated device” J. Joshua Yang, M. Zhang, G. Medelros-Ribeiro.

24. United States Patent USPTO US 8,525,146, 2013, “Electrical circuit component” W. Wu, M. D. Pickett, J. Joshua Yang, Q. Xia, G. Medeiros Ribeiro.

25. United States Patent USPTO US8,525,553, 2013, “Negative differential resistance comparator circuits” M. D. Pickett, J. Joshua Yang, M. Zhang.

26. United States Patent USPTO US8,519,372, 2013, “Electroforming-free nanoscale switching device” J. Joshua Yang, S.-Y. Wang, R. S. Williams, A. Bratkovski, G. Medeiros Ribeiro.

27. United States Patent USPTO US8,530,873, 2013, “Electroforming free memristor and method for fabricating thereof” J. Joshua Yang, G. Medeiros Ribeiro, R. S. Williams.

28. United States Patent USPTO US8,546,785, 2013, “Memristive device” J. Joshua Yang, F. Miao, W. Wu, S.-Y. Wang, R. S. Williams.

29. United States Patent USPTO US8,575,585, 2013, “Memristive device” J. Joshua Yang, Q. Xia, A. A. Bratkovski.

30. United States Patent USPTO US8,570,138, 2013, “Resistive Switches” J. Joshua Yang, D. B. Strukov, S. Y. Wang.

31. United States Patent USPTO US8,586,959, 2013, “Memristive switch device” M. D. Pickett, J. Joshua Yang, D. B. Strukov.

32. United States Patent USPTO US8,587,985, 2013, “Memory array with graded resistance lines” J. Joshua Yang, J. P. Strachan, W. Wu, Janice H. Nickel.

33. United States Patent USPTO US8,710,483 B2, 2014, “Memristive junction with intrinsic rectifier” J. Joshua Yang, J. P. Strachan, M. D. Pickett.

34. United States Patent USPTO US8,710,865, 2014, “Field-programmable analog array with memristors” J. Joshua Yang, M. S. Qureshi, G. Medeiros-Ribeiro, R. S. Williams.

35. United States Patent USPTO US8,711,594, 2014, “Asymmetric switching rectifier” M.-X. Zhang, J. Joshua Yang, R. S. Williams.

36. United States Patent USPTO US8,737,113, 2014, “Memory resistor having multi-layer electrodes” J. Joshua Yang, W. Wu, R Gilberto-Ribeiro.

37. United States Patent USPTO US8,766,228 B2, 2014, “Electrically actuated device and method of controlling the formation of dopants therein” J. Joshua Yang, D. Stewart, P. J. Kuekes, W. M. Tong.

38. United States Patent USPTO US8,767,438, 2014, “Memelectronic DeviceJ. Joshua Yang, B. J. Choi, M. -X. Max Zhang, G. Medeiros-Ribeiro, R. S. Williams.

39. United States Patent USPTO US8,766,231, 2014, “Nanoscale Electronic Device with Barrier Layers” Wei Yi, J. Joshua Yang, G. Medeiros-Ribeiro.

40. United States Patent USPTO US8,779,409, 2014, “Low energy memristors with engineered switching channel materialsJ. Joshua Yang, M.-X. Zhang, G. Medeiros-Ribeiro, R. S. Williams.

41. United States Patent USPTO US8,779,848, 2014, “Two terminal memcapacitor deviceM. D. Pickett, J. Borghetti, J. Joshua Yang.

42. United States Patent USPTO US8,891,284, 2014, “Memristors based on mixed-metal-valence compounds” R. S. Williams, J. Joshua Yang, M. D. Pickett, G. Medeiros-Ribeiro, J. P. Strachan.

43. United States Patent USPTO US8,809,158, 2014, “Device having memristive memoryM. D. Pickett, J. Joshua Yang, G. Medeiros-Ribeiro.

44. United States Patent USPTO US8,829,581, 2014, “Resistive memory devicesS. Y. Wang, J. Joshua Yang, A. A. Bratkovski, R. S. Williams.

45. United States Patent USPTO US8,923,034, 2014, “Multi-level memory cell with continuously tunable switchingY. Wei, F. Miao, J. Joshua Yang.

46. United States Patent USPTO US8,872,153, 2014, “Device structure for long endurance memristorsJ. Joshua Yang, M.-X. Zhang, R.S. Williams.

47. United States Patent USPTO US8,882,217, 2014, “Printhead assembly including memory elements” P. V. Lea, G. M. Ribeiro, M. D. Pickett, J. Joshua Yang.

48. United States Patent USPTO US8,879,300, 2014, “Switchable two-terminal devices with diffusion/drift speciesJ. Joshua Yang, W. Wu, Q. Xia.

49. United States Patent USPTO US8,878,342, 2014, “Using alloy electrodes to dope memristors” N. J. Quitoriano, D. Ohlberg, P. J. Kuekes, J. Joshua Yang.

50. United States Patent USPTO US8,890,106, 2014, “Hybrid circuit of nitride-based transistor and memristor” J. Joshua Yang, G. Medeiros-Ribeiro, B. J. Choi, R. S. Williams.

51. United States Patent USPTO US8,912,520, 2014, “Nanoscale switching deviceJ. Joshua Yang, M. D. Pickett, G. Medeiros-Ribeiro.

52. United States Patent USPTO US8,921,960, 2015, “Memristor cell structures for high density arraysJ. Joshua Yang, M. X. Zhang, G. Medeiros-Ribeiro, R. S. Williams.

53. United States Patent USPTO US9,082,533, 2015, “Memristive element based on hetero-junction oxideJ. Joshua Yang, M. X. Zhang, R. S. Williams.

54. United States Patent USPTO US9,159,476 B2, 2015, “Negative differential resistance deviceJ. Joshua Yang, M. X. Zhang, R. S. Williams.

55. United States Patent USPTO US9,000,411 B2, 2015, “Memristor devices configured to control bubble formation” Z. Li, A. M. Bratkovski, J. Joshua Yang.

56. United States Patent USPTO US8,766,228, 2014, “Electrically actuated device and method of controlling the formation of dopants thereinJ. Joshua Yang, D. R. Stewart, P. J. Kuekes, W. M. Tong.

57. United States Patent USPTO US9,024,285, 2015, “Nanoscale switching devices with partially oxidized electrodesJ. Joshua Yang, G. M. Ribeiro, R. S. Williams.

58. United States Patent USPTO US13/881452, 2015, “Memristive devices and memristors with ribbon-like junctions and methods for fabricating the sameH. S. Cho, J. Joshua Yang, J. H. Nickel.

59. United States Patent USPTO US9,041,157, B2, “Method for doping an electrically actuated deviceW. Wu, S. V. Mathai, S-Y. Wang, J. Joshua Yang.

60. United States Patent USPTO US9,040,948 B2, 2015, “Nanoscale switching device” G. Medeiros-Ribeiro, J. H. Nickel, J. Joshua Yang.

61. United States Patent USPTO US9,082,972 B2, 2015, “Bipolar resistive switch heat mitigation” J. P. Strachan, G. Medeiros Ribeiro, J. Joshua Yang, W. Yi.

62. United States Patent USPTO US9,196,354, 2015, “Memory resistor adjustment using feedback controlJ. P. Strachan, J. Borghetti, M. D. Pickett, G. Ribeiro, J. Joshua Yang.

63. United States Patent USPTO US9,184,213, 2015, “Nanoscale switching deviceJ. Joshua Yang, D. B. Strukov, W. Wu.

64. United States Patent USPTO US9,184,382, 2015, “Memristive devices with layered junctions and methods for fabricating the sameM. D. Pickett, J. Joshua Yang, G. Medeiros-Ribeiro.

65. United States Patent USPTO US9,178,153, 2015, “Memristor structure with a dopant sourceM. X. Zhang, J. Joshua Yang, R. S. Williams.

66. United States Patent USPTO US9,171,613, 2015, “Memristors with asymmetric electrodesA. M. Bratkovski, J. Joshua Yang, S.-Y. Wang, M. Stuke.

67. United States Patent USPTO US9,165,645, 2015, “High-reliability high-speed memristorF. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros-Ribeiro, R S. Williams.

68. United States Patent USPTO US8,982,601 B2, 2015, “Switchable junction with an intrinsic diode formed with a voltage dependent resistorJ. Joshua Yang, J. P. Strachan, J. Borghetti, M. D. Pickett.

69. United States Patent USPTO US9,224,949 B2, 2015, “Memristive elements that exhibit minimal sneak path currentJ. Joshua Yang, M. X. Zhang, R. S. Williams.

70. United States Patent USPTO US9,257,645 B2, 2016, “Memristors having mixed oxide phasesJ. Joshua Yang, M. X. Zhang, F. Miao.

71. United States Patent USPTO US9,293,200 B2, 2016, “Multilayer memory arrayJ. H. Nickel, G. Medeiros-Ribeiro, J. Joshua Yang.

72. United States Patent USPTO US9,331,278 B2, 2016, “Forming memristors on imaging devices J. Joshua Yang, N. Ge, Z. Li, M. X. Zhang.

73. United States Patent USPTO US9,276,204 B2, 2016, “Memristor with channel region in thermal equilibrium with containing region F. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros Ribeiro, R. Stanley Williams.

74. United States Patent USPTO US9,224,821 B2, 2015, “Customizable nonlinear electrical devices M. X. Zhang, J. Joshua Yang, G. Medeiros Ribeiro, R. S. Williams.

75. United States Patent USPTO US 2014/0112059 A1, 2016, “High-reliability high-speed memristor F. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros Ribeiro, R. S. Williams.

76. United States Patent USPTO US9,508,928 B2, 2016, “Nanochannel array of nanowires for resistive memory devicesS.-Y. Wang, J. Joshua Yang.

77. United States Patent USPTO US9,558,869, 2017, “Negative differential resistance device J. Joshua Yang, M. Zhang, R. S. Williams.

 

 

 

 

Text Box: Yang Research group

77 Patents Granted by USPTO; 70 Patents pending with USPTO.