Selected publications:

(For a full publication list, click here "J. Joshua Yang" )

 Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing, Nature Materials 16, 101 (2017).


 Anatomy of Ag/Hafnia-Based Selectors with 1E10 Nonlinearity, Advanced Materials, DOI: 10.1002/adma.201604457 (2017).


 High-speed and low-energy nitride memristors, Advanced Functional Materials 26, 5290 (2016).


 Electrochemical metallization switching with a platinum group metal in different oxides, Nanoscale 8, 14023 (2016).


 Dot-Product Engine for Neuromorphic Computing: Programming 1T1M Crossbar to Accelerate Vector-Matrix Multiplication, the 53rd Design Automation Conference (DAC), (2016).


 Enhanced noise at quantum conductance in memristors,

Nature Communications 7, 11142 (2016).


 Trilayer Tunnel Selectors for Memristor Memory Cells,

Advanced Materials 28, 356 (2016).


 RENO: a high-efficient reconfigurable neuromorphic computing accelerator design, Design Automation Conference (DAC), 52nd ACM/EDAC/IEEE (2015).


 Electrode-material dependent switching in TaOx memristors, Semiconductor Science and Technology 29, 104003 (2014).


 Memristive devices for computing,  

Nature Nanotechnology 8, 13 (2013).


 Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch, Nano Letters 13, 3213 (2013).

 Metal oxide memories based on thermochemical and valence change mechanisms, MRS Bulletin 37, 131 (2012).

 Engineering nonlinearity into memristors for passive crossbar applications,  Applied Physics Letters 100, 113501 (2012).

 Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor, Advanced Materials, 23, 5633 (2011).

 Memristive switches enable stateful logic operations via material implication, Nature 464, 873 (2010).

 Dopant control by atomic layer deposition in oxide films for memristive switches, Chemistry of Materials 23, 123 (2011).

 Over 70% tunneling magnetoresistance at room temperature for a CoFe and AlOx based magnetic tunnel junction, Applied Physics Letters 89, 202502 (2006).

 Diffusion of adhesion layer metals controls nanoscale memristive switching, Advanced Materials 22, 4034 (2010).

 A family of electronically reconfigurable nanodevices, Advanced Materials 21, 3754 (2009).

 High switching endurance in TaOx memristive devices, Applied Physics Letters 97, 232102 (2010).

 Electroforming mechanism of metal/oxide/metal memristive switches, Nanotechnology, 20, 215201(2009).

 Memresistive switching mechanism for metal/oxide/metal nano-devices Nature Nanotechnology 3, 429 (2008).









Text Box: Yang Research group