Yang Research Group - The Ionic and Electronic Device and Materials (IEDM) Group ico

RESEARCH

Existing technologies for the current computing system are approaching their physical limits, and novel device concepts are required as device sizes continuously decrease. Under these new concepts, the devices need to be not only increasingly infinitesimal and simple but also increasingly capable.

Accordingly, we have three major research thrusts towards unconventional computing technologies:

1. High performance Non-volatile memories;

2. Analog computing using Resistance analog switches;

3. Neuromorphic / Synaptic computing using memristive devices.

Publications

Selected publications:
(For a full publication list, click here " J. Joshua Yang " )

·  Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing , Nature materials16.1 (2017): 101-108.

·  Anatomy of Ag/Hafnia-Based Selectors with 1E10 Nonlinearity , Advanced Materials 29.12 (2017).

·  A novel true random number generator based on a stochastic diffusive memristor , Nature Communications 8, in press (2017).

·  Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths , Advanced Functional Materials 27.35 (2017).

·  Organic electronics: Battery-like artificial synapses , Nature Materials 16 (2017): 396-397.

·  Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability , Nature Communications 8 (2017).

·  Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors , Nature Communications 8 (2017): 15666.

·  High-speed and low-energy nitride memristors , Advanced Functional Materials 26, 5290 (2016).

·  Electrochemical metallization switching with a platinum group metal in different oxides , Nanoscale 8, 14023 (2016).

·  Dot-Product Engine for Neuromorphic Computing: Programming 1T1M Crossbar to Accelerate Vector-Matrix Multiplication , the 53rd Design Automation Conference (DAC), (2016).

·  Enhanced noise at quantum conductance in memristors , Nature Communications 7, 11142 (2016).

·  Trilayer Tunnel Selectors for Memristor Memory Cells , Advanced Materials 28, 356 (2016).

·  RENO: a high-efficient reconfigurable neuromorphic computing accelerator design , Design Automation Conference (DAC), 52nd ACM/EDAC/IEEE (2015).

·  Electrode-material dependent switching in TaOx memristors, Semiconductor Science and Technology , 29, 104003 (2014).

·  Memristive devices for computing , Nature Nanotechnology 8,13 (2013).

· Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch, Nano Letters 13, 3213 (2013).

· Metal oxide memories based on thermochemical and valence change mechanisms, MRS Bulletin 37, 131 (2012).

· Engineering nonlinearity into memristors for passive crossbar applications,  Applied Physics Letters 100, 113501 (2012).

· Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor, Advanced Materials, 23, 5633 (2011).

· Memristive switches enable stateful logic operations via material implication, Nature 464, 873 (2010).

· Dopant control by atomic layer deposition in oxide films for memristive switches, Chemistry of Materials 23, 123 (2011).

· Over 70% tunneling magnetoresistance at room temperature for a CoFe and AlOx based magnetic tunnel junction, Applied Physics Letters 89, 202502 (2006).

· Diffusion of adhesion layer metals controls nanoscale memristive switching, Advanced Materials 22, 4034 (2010).

· A family of electronically reconfigurable nanodevices, Advanced Materials 21, 3754 (2009).

· High switching endurance in TaOx memristive devices, Applied Physics Letters 97, 232102 (2010).

· Electroforming mechanism of metal/oxide/metal memristive switches, Nanotechnology, 20, 215201(2009).

·  Memresistive switching mechanism for metal/oxide/metal nano-devices , Nature Nanotechnology 3, 429 (2008).

Patents

1. United States Patent US7,450,352, 2008, “Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers”, Y. A. Chang, and J. Joshua Yang.

2. United States Patent US7,579,042, 2009, Methods for the fabrication of thermally stable magnetic tunnel junctions”, Y. A. Chang, J. Joshua Yang and P. F. Ladwig.

3. United States Patent US7,985,962, 2011, “Memristive device”, A. M. Bratkovski, D. Ohlberg, J. Joshua Yang.

4. United States Patent, US8,093,575, 2011, “Memristive device with a bi-metallic electrode”, Q. Xia, X. Li, J. Joshua Yang.

5. United States Patent, US8,063,395, 2011, “Memristor amorphous metal alloy electrodes”, Q. Xia, J. Joshua Yang, S. Y. Wang.

6.  United States Patent US8,207,593, 2012, “Memristor having a nanostructure in the switching material” A. M. Bratkovski, J. Joshua Yang, Q. Xia.

7. United States Patent US8,203,171, 2012, “Defective graphene-based memristor” J. Joshua Yang, F. Miao, W. Wu, S.-Y. Wang, R. S. Williams.

8. United States Patent US8,207,520, 2012, “Programmable crosspoint device with an integral diode” J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

9. United States Patent US8,283,649, 2012, “Memristor with a non-planar substrate” A. M Bratkovski, S.-Y. Wang, J. Joshua Yang, M. Stuke.

10. United States Patent US8,264,868, 2012, “Memory array with metal-insulator transition switching devices” G. M. Ribeiro, Pickett, Matthew, J. Joshua Yang.

11. United States Patent US8,259,485, 2012, “Multilayer structures having memory elements with varied resistance of switching layers” J. Joshua Yang, J. P. Strachan, W. Wu.

12. United States Patent US8,294,132, 2012, “Graphene memristor having modulated graphene interlayer conduction” F. Miao, J. Joshua Yang, W. Wu, S.-Y. Wang, R. S. Williams.

13. United States Patent US8,226,3521, 2012, “Memristors with an electrode metal reservoir for dopants” J. Joshua Yang, W. Yi, M. Stuke, S.-Y. Wang.

14. United States Patent US8,225,8304, 2012, “Guided mode resonator based raman enhancement apparatus” W. Wu, Q. Xia, J. Li, J. Joshua Yang.

15. United States Patent US8,226,4724, 2012, “Changing a memristor state” F. Miao, J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

16. United States Patent USPTO US8,324,976 B2, 2012, “Oscillator circuitry having negative differential resistance” J. Borghetti, M. D. Pickett, G. Medelros-Ribeiro, W. Yi, J. Joshua Yang, M. Zhang.

17. United States Patent US8,385,101, 2013, “Memory resistor having plural different active materials” J. Joshua Yang, M. Zhang, R. S. Williams.

18. United States Patent USPTO US8,415,652, 2013, “Memristors with a switching layer comprising a composite of multiple phases” J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

19. United States Patent USPTO US8,437,172, 2013, “Decoders using memristive switches” M.Fiorentino, W. M. Tong, P. J. Kuekes, J. Joshua Yang.

20. United States Patent USPTO US8,437,072, 2013, “Individually addressable nano mechanical actuator and contact switch by redox reaction in a crossbar array” J. Joshua Yang, R. S. Williams, W. M. Tong.

21. United States Patent USPTO US8,450,711, 2013, “Semiconductor memristor devices” R. S. Williams, J. Joshua Yang, D. R. Stewart.

22. United States Patent USPTO US8,455,852, 2013, “Controlled placement of dopants in memristor active regions” N. J. Quitoriano, P. J. Kuekes, J. Joshua Yang.

23. United States Patent USPTO US8,487,289, 2013, “Electrically actuated device” J. Joshua Yang, M. Zhang, G. Medelros-Ribeiro.

24. United States Patent USPTO US 8,525,146, 2013, “Electrical circuit component” W. Wu, M. D. Pickett, J. Joshua Yang, Q. Xia, G. Medeiros Ribeiro.

25. United States Patent USPTO US8,525,553, 2013, “Negative differential resistance comparator circuits” M. D. Pickett, J. Joshua Yang, M. Zhang.

26. United States Patent USPTO US8,519,372, 2013, “Electroforming-free nanoscale switching device” J. Joshua Yang, S.-Y. Wang, R. S. Williams, A. Bratkovski, G. Medeiros Ribeiro.

27. United States Patent USPTO US8,530,873, 2013, “Electroforming free memristor and method for fabricating thereof” J. Joshua Yang, G. Medeiros Ribeiro, R. S. Williams.

28. United States Patent USPTO US8,546,785, 2013, “Memristive device” J. Joshua Yang, F. Miao, W. Wu, S.-Y. Wang, R. S. Williams.

29. United States Patent USPTO US8,575,585, 2013, “Memristive device” J. Joshua Yang, Q. Xia, A. A. Bratkovski.

30. United States Patent USPTO US8,570,138, 2013, “Resistive Switches” J. Joshua Yang, D. B. Strukov, S. Y. Wang.

31. United States Patent USPTO US8,586,959, 2013, “Memristive switch device” M. D. Pickett, J. Joshua Yang, D. B. Strukov.

32. United States Patent USPTO US8,587,985, 2013, “Memory array with graded resistance lines” J. Joshua Yang, J. P. Strachan, W. Wu, Janice H. Nickel.

33. United States Patent USPTO US8,710,483 B2, 2014, “Memristive junction with intrinsic rectifier” J. Joshua Yang, J. P. Strachan, M. D. Pickett.

34. United States Patent USPTO US8,710,865, 2014, “Field-programmable analog array with memristors” J. Joshua Yang, M. S. Qureshi, G. Medeiros-Ribeiro, R. S. Williams.

35. United States Patent USPTO US8,711,594, 2014, “Asymmetric switching rectifier” M.-X. Zhang, J. Joshua Yang, R. S. Williams.

36. United States Patent USPTO US8,737,113, 2014, “Memory resistor having multi-layer electrodes” J. Joshua Yang, W. Wu, R Gilberto-Ribeiro.

37. United States Patent USPTO US8,766,228 B2, 2014, “Electrically actuated device and method of controlling the formation of dopants therein” J. Joshua Yang, D. Stewart, P. J. Kuekes, W. M. Tong.

38. United States Patent USPTO US8,767,438, 2014, “Memelectronic DeviceJ. Joshua Yang, B. J. Choi, M. -X. Max Zhang, G. Medeiros-Ribeiro, R. S. Williams.

39. United States Patent USPTO US8,766,231, 2014, “Nanoscale Electronic Device with Barrier Layers” Wei Yi, J. Joshua Yang, G. Medeiros-Ribeiro.

40. United States Patent USPTO US8,779,409, 2014, “Low energy memristors with engineered switching channel materialsJ. Joshua Yang, M.-X. Zhang, G. Medeiros-Ribeiro, R. S. Williams.

41. United States Patent USPTO US8,779,848, 2014, “Two terminal memcapacitor deviceM. D. Pickett, J. Borghetti, J. Joshua Yang.

42. United States Patent USPTO US8,891,284, 2014, “Memristors based on mixed-metal-valence compounds” R. S. Williams, J. Joshua Yang, M. D. Pickett, G. Medeiros-Ribeiro, J. P. Strachan.

43. United States Patent USPTO US8,809,158, 2014, “Device having memristive memoryM. D. Pickett, J. Joshua Yang, G. Medeiros-Ribeiro.

44. United States Patent USPTO US8,829,581, 2014, “Resistive memory devicesS. Y. Wang, J. Joshua Yang, A. A. Bratkovski, R. S. Williams.

45. United States Patent USPTO US8,923,034, 2014, “Multi-level memory cell with continuously tunable switchingY. Wei, F. Miao, J. Joshua Yang.

46. United States Patent USPTO US8,872,153, 2014, “Device structure for long endurance memristorsJ. Joshua Yang, M.-X. Zhang, R.S. Williams.

47. United States Patent USPTO US8,882,217, 2014, “Printhead assembly including memory elements” P. V. Lea, G. M. Ribeiro, M. D. Pickett, J. Joshua Yang.

48. United States Patent USPTO US8,879,300, 2014, “Switchable two-terminal devices with diffusion/drift speciesJ. Joshua Yang, W. Wu, Q. Xia.

49. United States Patent USPTO US8,878,342, 2014, “Using alloy electrodes to dope memristors” N. J. Quitoriano, D. Ohlberg, P. J. Kuekes, J. Joshua Yang.

50. United States Patent USPTO US8,890,106, 2014, “Hybrid circuit of nitride-based transistor and memristor” J. Joshua Yang, G. Medeiros-Ribeiro, B. J. Choi, R. S. Williams.

51. United States Patent USPTO US8,912,520, 2014, “Nanoscale switching deviceJ. Joshua Yang, M. D. Pickett, G. Medeiros-Ribeiro.

52. United States Patent USPTO US8,921,960, 2015, “Memristor cell structures for high density arraysJ. Joshua Yang, M. X. Zhang, G. Medeiros-Ribeiro, R. S. Williams.

53. United States Patent USPTO US9,082,533, 2015, “Memristive element based on hetero-junction oxideJ. Joshua Yang, M. X. Zhang, R. S. Williams.

54. United States Patent USPTO US9,159,476 B2, 2015, “Negative differential resistance deviceJ. Joshua Yang, M. X. Zhang, R. S. Williams.

55. United States Patent USPTO US9,000,411 B2, 2015, “Memristor devices configured to control bubble formation” Z. Li, A. M. Bratkovski, J. Joshua Yang.

56. United States Patent USPTO US8,766,228, 2014, “Electrically actuated device and method of controlling the formation of dopants thereinJ. Joshua Yang, D. R. Stewart, P. J. Kuekes, W. M. Tong.

57. United States Patent USPTO US9,024,285, 2015, “Nanoscale switching devices with partially oxidized electrodesJ. Joshua Yang, G. M. Ribeiro, R. S. Williams.

58. United States Patent USPTO US13/881452, 2015, “Memristive devices and memristors with ribbon-like junctions and methods for fabricating the sameH. S. Cho, J. Joshua Yang, J. H. Nickel.

59. United States Patent USPTO US9,041,157, B2, “Method for doping an electrically actuated deviceW. Wu, S. V. Mathai, S-Y. Wang, J. Joshua Yang.

60. United States Patent USPTO US9,040,948 B2, 2015, “Nanoscale switching device” G. Medeiros-Ribeiro, J. H. Nickel, J. Joshua Yang.

61. United States Patent USPTO US9,082,972 B2, 2015, “Bipolar resistive switch heat mitigation” J. P. Strachan, G. Medeiros Ribeiro, J. Joshua Yang, W. Yi.

62. United States Patent USPTO US9,196,354, 2015, “Memory resistor adjustment using feedback controlJ. P. Strachan, J. Borghetti, M. D. Pickett, G. Ribeiro, J. Joshua Yang.

63. United States Patent USPTO US9,184,213, 2015, “Nanoscale switching deviceJ. Joshua Yang, D. B. Strukov, W. Wu.

64. United States Patent USPTO US9,184,382, 2015, “Memristive devices with layered junctions and methods for fabricating the sameM. D. Pickett, J. Joshua Yang, G. Medeiros-Ribeiro.

65. United States Patent USPTO US9,178,153, 2015, “Memristor structure with a dopant sourceM. X. Zhang, J. Joshua Yang, R. S. Williams.

66. United States Patent USPTO US9,171,613, 2015, “Memristors with asymmetric electrodesA. M. Bratkovski, J. Joshua Yang, S.-Y. Wang, M. Stuke.

67. United States Patent USPTO US9,165,645, 2015, “High-reliability high-speed memristorF. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros-Ribeiro, R S. Williams.

68. United States Patent USPTO US8,982,601 B2, 2015, “Switchable junction with an intrinsic diode formed with a voltage dependent resistorJ. Joshua Yang, J. P. Strachan, J. Borghetti, M. D. Pickett.

69. United States Patent USPTO US9,224,949 B2, 2015, “Memristive elements that exhibit minimal sneak path currentJ. Joshua Yang, M. X. Zhang, R. S. Williams.

70. United States Patent USPTO US9,257,645 B2, 2016, “Memristors having mixed oxide phasesJ. Joshua Yang, M. X. Zhang, F. Miao.

71. United States Patent USPTO US9,293,200 B2, 2016, “Multilayer memory arrayJ. H. Nickel, G. Medeiros-Ribeiro, J. Joshua Yang.

72. United States Patent USPTO US9,331,278 B2, 2016, “Forming memristors on imaging devices J. Joshua Yang, N. Ge, Z. Li, M. X. Zhang.

73. United States Patent USPTO US9,276,204 B2, 2016, “Memristor with channel region in thermal equilibrium with containing region F. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros Ribeiro, R. Stanley Williams.

74. United States Patent USPTO US9,224,821 B2, 2015, “Customizable nonlinear electrical devices M. X. Zhang, J. Joshua Yang, G. Medeiros Ribeiro, R. S. Williams.

75. United States Patent USPTO US 2014/0112059 A1, 2016, “High-reliability high-speed memristor F. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros Ribeiro, R. S. Williams.

76. United States Patent USPTO US9,508,928 B2, 2016, “Nanochannel array of nanowires for resistive memory devicesS.-Y. Wang, J. Joshua Yang.

77. United States Patent USPTO US9,558,869, 2017, “Negative differential resistance device J. Joshua Yang, M. Zhang, R. S. Williams.

Invited Tlaks

International conferences:

1. J. Joshua Yang, 2009, The 10th Non-volatile memory technology symposium (NVMTS09), Portland, Oregon.

2. J. Joshua Yang, “Oxide based memristive nanodevices”, 2009, International Conference on Communications, Circuits and Systems 2009 (ICCCAS 2009) San Jose, California.

3. J. Joshua Yang, Seminar, 2009, Seoul National University, Korea.

4. J. Joshua Yang, M. D. Pickett, F. Miao, J. Borghetti, D. A. A. Ohlberg, D. R. Stewart, G. M. Ribeiro,and R. S. Williams, “Metal/oxide/metal memristive devices”, 2009, The 7th International Conference on Advanced Materials and Devices (ICAMD 2009), Jeju island, KOREA.

5. J. Joshua Yang, J. P. Strachan, J. Borghetti, M. D. Pickett, Q. Xia, D. A. A. Ohlberg, D. R. Stewart, G. M. Ribeiro, and R. S. Williams, “Engineering control and applications of oxide based nano-switches”, 2010, International Symposium on Integrated Functionalities ( ISIF 2010), San Juan, Puerto Rico.

6. J. Joshua Yang, “Engineering control over device properties of memristors for immediate applications”, 2010, Julius Springer Forum on Applied Physics, Stanford University, CA.

7. J. Joshua Yang, “Promises and challenges of Memristive switches”, 2011, 11th Non-Volatile Memory Technology Symposium, Shanghai, China. (Keynote)

8. J. Joshua Yang, “Oxide based memristive devices”, 2012, IEEE International Conference on Solid-State and Integrated Circuit Technology, 2012, Xi'an, China.

9. J. Joshua Yang, “TaOx based memristive devices”, 2012, 12th Non-Volatile Memory Technology Symposium, Singapore.

10. J. Joshua Yang, “Memristive nanodevices for computing”, 2013, The 57th International Conference on Electron, Ion, Photon Beam Technology and Nanofabrication (EIPBN), Tennessee.

11. J. Joshua Yang “Memristive Devices for Computing”, 2013, The 224th Electrochemical Society Meeting, ULSI Process Integration Symposium, San Francisco, California. (Keynote)

12. J. Joshua Yang, “Memristive Nanodevices”, Nano and Giga 2014, Phoenix, Arizona.

13. J. Joshua Yang, “Challenges and Materials Solutions for Memristive Devices (ReRAM)”, MRS Spring 2014, San Francisco, California.

14. J. Joshua Yang, “The material perspective ReRAM” The IEEE International Symposium on Circuits and Systems (ISCAS), FEST 2014, Melbourne, Australia. (Keynote)

15. J. Joshua Yang, “Tutorial on Memristive devices” the 29th Symposium on on Microeletronics Technology and Devices, 2014 (SBMICRO 2014, Chip in Aracaju), Aracaju, Brazil.

16. J. Joshua Yang, “Challenges and solutions of memristors for Neuromorphic Computing” the International Symposium on Neuromorphic Systems and Cyborg Intelligence, 2014, Hangzhou, China.

17. J. Joshua Yang, “Materials Perspective of Memristive Devices”, 2014, IEEE International Conference on Solid-State and Integrated Circuit Technology, 2014, Guilin, China.

18. J. Joshua Yang, “Challenges and Solutions for Memristive Devices”, The AVS 61st International Symposium & Exhibition, 2014, Baltimore, Maryland.

19. J. Joshua Yang, “RRAM tutorial”, MRS Fall Meeting 2014, Boston, Mssachusetts.

20. J. Joshua Yang, “Memristive Devices (ReRAM): Challenges and Possible Solutions”, MRS Fall Meeting 2015, Boston, Mssachusetts.

21. J. Joshua Yang, “Promises and challenges of memristive devices”, 15th INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE Nano 2015) 2015, Rome, Italy.

22. J. Joshua Yang, “Memristive nanodevices for computing - challenges and solutions”, China Semiconductor Technology International Conference 2015 (IEEE CSTIC 2015) 2015, Shanghai, China.

23. J. Joshua Yang, “Challenges and possible solutions for memristive devices”, 15th Non-Volatile Memory Technology Symposium (IEEE NVMTS 2015),  2015 Beijing, China. 

24. J. Joshua Yang, “Engineering interfaces for memristive devices”, the 43rd Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-43), Palms Springs, CA, 2016.

25. J. Joshua Yang, “Materials issues in memristive devices”, 145th TMS annual meeting, 2016, Nashville, Tennessee.

26. J. Joshua Yang, “Different applications of memristors enabled by selector devices”, China Semiconductor Technology International Conference (CSTIC), 2016, Shanghai, China. (Keynote)

27. J. Joshua Yang, “Memristor Mate devices”, International Workshop on Information Storage/10th International Symposium on Optical Storage (IWIS/ISOS 2016), Changzhou, China. (Keynote)

28. J. Joshua Yang, “A versatile two-terminal device enables different applications of resistance switches” The IEEE International Symposium on Circuits and Systems (ISCAS), 2016, Montréal, Canada.

29. J. Joshua Yang, “Challenges and solutions for memristors used for memory and neuromorphic computing”, 16th Non-Volatile Memory Technology Symposium (IEEE NVMTS 2016), 2016 Pittsburg, Pennsylvania. 

30. Z. Wang, S. Joshi, J. Joshua Yang, “Engineered materials for memristor mate” International Conferences on Modern Materials and Technologies (CIMTEC), 2016, Perugia, Italy.

31. J. Joshua Yang, “Engineered materials for memristor mate” 58th Electronic Materials Conference (EMC), 2016, Newark, Delaware.

32. J. Joshua Yang, “non-volatile memories” 230th Meeting of Electrochemical Society (ECS), 2016, Honolulu, Hawaii.

33. J. Joshua Yang, “Memristors with diffusive relaxation dynamics for neuromorphic computing”, IEEE 13th International Conference on Solid-State and Integrated Circuit Technology (ICSICT),2016, Hangzhou, China.

34. J. Joshua Yang, “memristors with diffusive relaxation dynamics for neuromorphic computing”, 2016, 16th Non-Volatile Memory Technology Symposium, Pennsylvania, USA.

35. J. Joshua Yang, “Emerging Materials and Technologies for Nonvolatile Memories”, MRS Fall Meeting 2016, Boston, Massachusetts.

36. J. Joshua Yang, “Challenges and solutions for memristors used for memory and neuromorphic computing”, MRS Spring Meeting 2017, Phoenix, Arizona.

37. J. Joshua Yang, “Challenges and solutions for memristors used for memory and neuromorphic computing”, Collaborative Conference on Materials Research (CCMR), 2017, Jeju Island, South Korea.

38. J. Joshua Yang, “Diffusive memristors for future computing”, China Semiconductor Technology International Conference (CSTIC), 2017, Shanghai, China. (Keynote)

39. J. Joshua Yang, “Diffusive Memristors” 1st International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Athens, Greece (2017). (Plenary)

40. J. Joshua Yang, “Challenges and solutions for memristors used for memory and neuromorphic computing”, MRS Spring Meeting 2017, Phoenix, Arizona.

41. J. Joshua Yang, “Diffusive Memristors for Computing”, The 21st International Conference on Solid State Ionics (SSI-21), 2017, Padua, Italy.

 

International workshops:

42. J. Joshua Yang, R. S. Williams, “The memristor at age 40”, 2010, International Symposium on Materials for Enabling Nanodevices, UCLA, California. Plenary talk

43. J. Joshua Yang, “Applications and property engineering of memristive nanodevices”, 2010, Advances in nonvolatile memory materials and devices, Suzhou, China.

44. J. Joshua Yang, M. -X. Zhang, J. P. Strachan, J. Borghetti, M. D. Pickett, F. miao, Q. Xia, D. A. A. Ohlberg, J. H. Nickel, G. M. Ribeiro, R. S. Williams “Recent progress on oxide based memristive devices in HP”, 2011, Non-volatile memories worshop, University of California - San Diego, California.

45. J. Joshua Yang, “Oxide based memristive devices”, 2011, Frontier of Functional-Oxide Nano Electronics workshop, Tsukuba, Japan.

46. J. Joshua Yang “The Memristor” LASERION international workshop, 2013, Munich, Germany.

47. J. Joshua Yang, “Memristive Devices for Computing” Global Forum on Nanoelectronic Manufacturing: From Materials to Systems, 2014 Mumbai, India.

48. J. Joshua Yang, “Memristive nanodevices for computing - challenges and solutions”, International workshop Advances in ReRAM: Materials and Interfaces 2015, Crete, Greece. (Keynote)

49. J. Joshua Yang, “Experimental demonstration of analog computing and neuromorphic computing with memristor crossbar arrays” Energy Consequences of Information Workshop, 2017 Santa Fe, New Mexico.

50. J. Joshua Yang, “Unconventional computing using neural network based memristors”, 2017, The 2017 Stephen and Sharon Seiden Frontiers in Engineering & Science Workshop: “Beyond CMOS: From Devices to Systems”, Haifa, Isreal.

51. J. Joshua Yang, “Memristive devices for neuromorphic computing”, the 2017 APS/CNM Users Meeting, 2017, Argonne National Labs, Illinois.

 

Seminars:

52. J. Joshua Yang, “Resistance Memory Nanoelectronics”, May/2009, Invited Lecture, UCSC-NASA Ames Research Center, Mountain View, California.

53. J. Joshua Yang, “Oxide based memristive junctions: switching, forming and device family”, 2009, Seminar, University of California, Santa Cruz, California.

54. J. Joshua Yang, “Memristive Nanodevices”, 2010, Seminar, Peking University, Beijing, China.

55. J. Joshua Yang, “Oxide based nanoswitches”, 2010, Seminar, Chinese Academy of Science, Beijing, China.

56. J. Joshua Yang, “Memristors in Computing: Promises and Challenges”, 2011, seminar, IEEE Computer Society, San Jose California.

57. J. Joshua Yang, “Metal oxide based nonvolatile memories - promises and challenges”, 2011, IEEE Electronic Device Society, Santa Clara, California.

58. J. Joshua Yang, “Memristive Nanodevices: mechanism, promises and challenges”, 2012, Seminar, University of Pittsburgh, Pittsburgh, Pennsylvania.

59.  J. Joshua Yang, “Oxide based Memristive Nanodevices”, 2012, Seminar, Michigan State University, East Lansing, Michigan.

60. J. Joshua Yang, “Mermistor technology development”, 2012, seminar, Finisar corp. Sunnyvale California.

61. J. Joshua Yang, “Memristive Nanodevices: Mechanisms, Applications and Challenges”, 2012, IEEE SINGAPORE REL/CPMT/ED CHAPTER, Singapore.

62. J. Joshua Yang, “TaOx Memristive Nano-devices: Mechanism, Applications and Challenges”, 2012, Advanced Memory Workshop, NCCAVS Thin Film Users Group, California.

63. J. Joshua YangMemristive Devices for Computing”, 2013, IEEE SCV Electron Devices Society, Santa Clara, California.

64. J. Joshua Yang “Memristive nanodevices: mechanisms, promises and challenges”, 2013, seminar, University of California, Berkeley, California.

65. J. Joshua Yang, Special Lecture, AirForce Research Lab, Rome, New York (2013). (Chief Scientist Lecture Series)

66. J. Joshua Yang, “Memristive materials and Devices”, 2014, Seminar, Tsinghua University, Beijing, China.

67. J. Joshua Yang, “Resistance switching: applications, mechanisms and challenges”, 2015, Seminar, HGST, San Jose, California.

68. J. Joshua Yang, “Challenges and solutions for memristors used for memory and neuromorphic computing”, 2016, seminar, Chinese Academy of Science, Beijing.

69. J. Joshua Yang, “Memristor applications enabled by selectors”, 2016, seminar, Tsinghua University, Beijing.

70. J. Joshua Yang, “Diffusive memristor as synaptic emulators for neuromorphic computing”, 2016, seminar, Peking University, Beijing.

 

 

People

Principal Investigator

Jianhua (Joshua) Yang, Professor

Jianhua (Joshua) Yang, Ph. D, Professor

Dr. Yang is a professor in the Department of Electrical and Computer Engineering at the University of Massachusetts, Amherst. He spent over 8 years at HP Labs before joining UMass in 2015. His current research interests are Nanoelectronics and Nanoionics, especially for energy and computing applications, where he authored and co-authored over 100 papers in peer-reviewed academic journals, and holds 77 granted and over 70 pending US Patents. He obtained his B.A. degree in mechanical engineering from Southeast University in China and PhD from the University of Wisconsin – Madison in Material Science Program.

He is a co-chair of the RRAM session of IEDM 2014. He was the chair of the 8th IEEE Nanotechnology SFBA Council Symposium on “Emerging Non-volatile Memory Technologies” and also the chair of the 10th symposium on “The Promise and Progress of Nanotech Enabled 2D Devices and Materials. He has guest-edited three journal special issues on NVRAM and memristor technologies for Nanotechnology, Applied Physics A, and IEEE JETCAS. He serves as in the Editor Boards of Applied Physics A, Scientific Reports.

Postdoctoral Fellow

Zhongrui Wang, Ph. D

(Co-supervised with Prof. Q. Xia)
Ph.D., Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 2014

JungHo Yoon

Ph.D., Department of Materials Science and Engineering, Seoul National University, Korea, 2015

Saumil Joshi, Ph. D

Ph.D., Department of Electrical Engineering,
University of Colorado at Boulder, USA, 2015

Ph.D student

Mingyi, Rao

M.S., Microelectronics,
Fudan University, Shanghai, China, 2015
B.S., Microelectronics,
Fudan University, Shanghai, China, 2012

Navnidhi Kumar Upadhyay

M.E., Electronic Systems
Indian Institute of Technology, Bombay, India, 2015
B.E., Electronics and Communication Engineering
National Institute of Science and Technology, Berhampur, India, 2010

Shiva Asapu

M.E., Electrical Engineering
Indian Institute of Technology, Kanpur, India, 2016
B.E., Electrical Engineering
Indian Institute of Technology, Kanpur, India, 2014

Ye Zhuo

B.S., Physics,
University of Science and Technology of China, Hefei,
China, 2016

Rivu Midya

B.S., Electronics and Communication
West Bengal University of Technology, India, 2014
M.S., ECE, UMass Amherst, 2016

Wenhao Song

B.S., Science and Technology of Electronic information
Beijing Normal University, Beijing, China, 2014

Master student

Yunning Li

B.S., Microelectronics
Soochow University, China, 2010

Undergraduate student

Siyu Wu

B.S., ECE UMass, Amherst, 2015

Visiting student

Ph.D student

Peng Yan

M.E., Microelectronics and Solid-state Electronics,
Huazhong University of Science and Technology,
Wuhan, China, 2013

B.E., Electronic Science and Technology,
Huazhong University of Science and Technology, Wuhan, China, 2012

Krishna Rajan

Department Of Applied Science and Technology
Politecnico Di Torino
Turin, Italy
Center for Space Human Robotics,
Italian Institute Of Technoloy, Italy, Torino,10139

Undergraduate student

Ziqi Zhang

Precision Instrument Engineering Department
Tianjin University

Yingjie Wu

Precision Instrument Engineering Department
Tianjin University

Group activityies

Sept 2014, Dr. Moon Hyung Jang and Dr. Zhongrui Wang joined Prof. Yang and Prof. Xia’s group.

Jan 18 2015, Prof. J. Joshua Yang officially joined the ECE department at UMass Amherst.

Feb 5 2015, J. C. Davis joined the group as a undergraduate student.

April 9 2015, Dr. Saumil Joshi joined the group as a postdoc researcher.

Aug 22 2015, Navnidhi Kumar Upadhyay joined the group as a Ph. D student.

Aug 23 2015, Dr. Jungho Yoon joined the group as a postdoc researcher.

Sept 2 2015, Mingyi Rao joined the group as a Ph. D student.

Aug 2016, Shiva and Ye Zhuo joined the group as Ph. D students.

Sept 2016, Peng Yan joined the group as visiting Ph. D student.

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Yang Research Group - The Ionic and Electronic Device and Materials (IEDM) Group © 2017