RESEARCH

Existing technologies for the current computing system are approaching their physical limits, and novel device concepts are required as device sizes continuously decrease. Under these new concepts, the devices need to be not only increasingly infinitesimal and simple but also increasingly capable.

Accordingly, we have three major research thrusts towards unconventional computing technologies:

1. High performance Non-volatile memories;

2. Analog computing using Resistance analog switches;

3. Neuromorphic / Synaptic computing using memristive devices.

Publications

Selected publications:
(For a full publication list, click here for Google Scholar" J. Joshua Yang " )
  1. Z. Wang, S. Joshi, S. Savel’ev, W. Song, R. Midya, Y. Li, M. Rao, P. Yan, S. Asapu, Y. Zhuo, H. Jiang, P. Lin, C. Li, J. H.. Yoon, N. K. Upadhyay, J. Zhang, M. Hu, J. P. Strachan, M. Barnell, Q. Wu, H. Wu, R. Stanley Williams*, Q. Xia*, and J. Joshua Yang*, "Fully memristive neural networks for pattern classification with unsupervised learning" , Nature Electronics 1, 137–145 (2018). "Preview PDF"

  2. Z. Wang, S. Joshi, S. E. Savel’ev, H. Jiang, R. Midya, P. Lin, M. Hu, N. Ge, J. P. Strachan,Z. Li, Q. Wu, M. Barnell, G-L Li, H. L. Xin, R. S. Williams, Q. Xia, and J. Joshua Yang*, "Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing" , Nature materials 16, 101-108 (2017). "Preview PDF"

  3. C. Li, M. Hu, Y. Li, H. Jiang, N. Ge, E. Montgomery, J. Zhang, W. Song, N. Davila, C. E. Graves, Z. Li, J. P. Strachan*, P. Lin, Z. Wang, M. Barnell, Q. Wu, R. S. Williams, J. Joshua Yang*, Q. Xia*, "Analogue signal and image processing with large memristor crossbars" , Nature Electronics 1, 52–59 (2018). "Preview PDF"

  4. C. Li, D. Belkin, Y. Li, P. Yan, M. Hu, N. Ge, H. Jiang, E. Montgomery, P. Lin, Z. Wang, J. P. Strachan, M. Barnell, Q. Wu, R. S. Williams, J. Joshua Yang*, Q. Xia*, "Efficient and self-adaptive in-situ learning in multilayer memristive neural networks" , Nature Communications In Press (2018).

  5. M. Hu, C. E. Graves, C. Li, Y. Li, N. Ge, E. Montgomery, N. Davila, H. Jiang, R. S. Williams, J. Joshua Yang*, Qiangfei Xia*, and John Paul Strachan*, "Memristor-based analog computation and neural network classification with a dot product engine" , Advanced Materials 29, 1705914 (2018).

  6. J. H. Yoon, Z. Wang, K. M. Kim, H. Wu, V. Ravichandran, Q. Xia*, C. S. Hwang and J. Joshua Yang*, "An Artificial Nociceptor Based on a Diffusive Memristor" , Nature Communications 9, 417 (2018).

  7. M. Wang, S. Cai, C. Pan, C. Wang, X. Lian, K. Xu, Y. Zhuo, J. Joshua Yang*, P. Wang*, F. Miao*, "Robust memristors based on fully layered two-dimensional materials" , Nature Electronics 1, 130–136 (2018). "Preview PDF"

  8. Z. Wang, M. Rao, R. Midya, S. Joshi, H. Jiang, P. Lin, W. Song, S. Asapu, Y. Zhuo, C. Li, H. Wu*, Q. Xia*, and J. Joshua Yang*, "Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications" , Advanced Functional Materials 28, 1704862 (2018).

  9. J. Joshua Yang* and Q. Xia, "Battery-like artificial synapses" , Nature materials 16, 396-397 (2017). "Preview PDF"

  10. R. Midya, Z. Wang, J. Zhang, C. Li, S. Joshi, H. Jiang, P. Lin, K. Norris, N. Ge, Q. Wu, M. Barnell, Z. Li, R. S. Williams, Q. Xia*, and J. Joshua Yang*, "Anatomy of Ag/Hafnia-Based Selectors with 1E10 Nonlinearity" , Advanced Materials 29, 1604457(2017).

  11. J. H. Yoon, J. Zhang, X. Ren, Z. Wang, H. Wu, Z. Li, M. Barnell, Q. Wu, L. J. Lauhon, Q. Xia and J. Joshua Yang*, "Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths" , Advanced Functional Materials 27, 1702010 (2017).

  12. H. Jiang, D. Belkin, S. Savel'ev, S. Lin, Z. Wang, Y. Li, S. Joshi, R. Midya, C. Li, M. Rao, M. Barnell, Q. Wu, J. Joshua Yang*, Q. Xia*, "A novel true random number generator based on a stochastic diffusive memristor" , Nature Communications 8, 882 (2017).

  13. C. Li, L. Han, H. Jiang, M. Jang, J. Joshua Yang, H. L. Xin and Q. Xia*, "Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors" , Nature Communications 8, 15666 (2017).

  14. Ch. Wu, T. W. Kim, H. Y. Choi, D. U. Lee, D. R. Strukov and J. Joshua Yang, "Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability" , Nature Communications 8, 752 (2017).

  15. Ch. Wu, T. W. Kim, T. Guo, F. Li, D. U. Lee, and J. Joshua Yang, "Mimicking classical conditioning based on a single flexible memristor" , Advanced Materials 29, 1602890 (2017).

  16. B. J. Choi, J. Zhang, K. Norris, G. Gibson, K. M. Kim, W. Jackson, M. Zhang, Z. Li, J. Joshua Yang*, and R. Stanley Williams*, "Trilayer Tunnel Selectors for Memristor Memory Cells" , Advanced Materials 28, 356-362 (2016).

  17. B. J. Choi, A. C. Torrezan, J. P. Strachan, P. G. Kotula, A. J. Lohn, M. J. Marinella, R. S. Williams* and J. Joshua Yang*, "High-speed and low-energy nitride memristors" , Advanced Functional Materials 26, 5290-5296 (2016).

  18. B. J. Choi, A. C. Torrezan, K. J. Norris, F. Miao, J. P.Strachan, M.-X. Zhang, D. A. A. Ohlberg, N. P. Kobayashi, J. Joshua Yang,* and R. S. Williams, "Electrical Performance and Scalability of Pt Dispersed SiO" , Nano Letters 13, 3213-3217 (2013).

  19. J. Joshua Yang*, Dmitri B. Strukov and Duncan R. Stewart, "Memristive devices for computing" , Nature Nanotechnology 8, 13-24 (2013).

  20. J. Joshua Yang*, M.-X. Zhang, M. D. Pickett, F. Miao, J. P. Strachan, W. Li, W. Yi, D. A. A. Ohlberg, B. J. Choi, W. Wu, J. H. Nickel, G. Medeiros-Ribeiro and R. Stanley Williams, "Engineering nonlinearity into memristors for passive crossbar applications" , Applied Physics Letters 100, 113501 (2012).

  21. F. Miao, J. P. Strachan, J. Joshua Yang*, M.-X. Zhang, I. Goldfarb, A. C. Torrezan, P. Eschbach, R. D. Kelley, G. Medeiros-Ribeiro and R. S. Williams, "Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor" , Advanced Materials 23, 5633 (2011).

  22. J. Borghetti, G. S. Snider, P. J. Kuekes, J. Joshua Yang, D. R. Stewart and R. S. Williams, "Memristive’ switches enable ‘stateful’ logic operations via material implication" , NATURE 464, 873–876 (2010).

  23. J. Joshua Yang, J. P. Strachan, Q. Xia, D. A. A. Ohlberg, P. J. Kuekes, R. D. Kelley, W. F. Stickle, D. R. Stewart, G. Medeiros-Ribeiro, R. S. Williams, "Diffusion of adhesion layer metals controls nanoscale memristive switching" , Advanced Materials 22, 4034 (2010).

  24. J. Joshua Yang*, M.-X. Zhang, John Paul Strachan, Feng Miao, Matthew D. Pickett, Ronald D. Kelley, G. Medeiros-Ribeiro, R. Stanley Williams "High switching endurance in TaOx memristive devices" , Applied Physics Letters 97, 232102 (2010).

  25. J. Joshua Yang, J. Borghetti, D. Murphy, D. R. Stewart and R. S. Williams, "A family of electronically reconfigurable nanodevices" , Advanced Materials 21, 3754 (2009).

  26. J. Joshua Yang, F. Miao, D. Ohlberg, D. Stewart, R. S Williams, "Electroforming mechanism of metal/oxide/metal memristive switches" , Nanotechnology 20, 215201 (2009).

  27. J. Joshua Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, "Memresistive switching mechanism for metal/oxide/metal nano-devices" , Nature Nanotechnology 3, 429 (2008).

Granted Patents

  1. United States Patent US7,450,352, 2008, “Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers”, Y. A. Chang, and J. Joshua Yang.

  2. United States Patent US7,579,042, 2009, “Methods for the fabrication of thermally stable magnetic tunnel junctions”, Y. A. Chang, J. Joshua Yang and P. F. Ladwig.

  3. United States Patent US7,985,962, 2011, “Memristive device”, A. M. Bratkovski, D. Ohlberg, J. Joshua Yang.

  4. United States Patent, US8,093,575,2011, “Memristive device with a bi-metallic electrode”, Q. Xia, X. Li, J. Joshua Yang.

  5. United States Patent, US8,063,395,2011, “Memristor amorphous metal alloy electrodes”, Q. Xia, J. Joshua Yang, S. Y. Wang.

  6. United States Patent US8,207,593, 2012, “Memristor having a nanostructure in the switching material” A. M. Bratkovski, J. Joshua Yang, Q. Xia.

  7. United States Patent US8,203,171, 2012, “Defective graphene-based memristor” J. Joshua Yang, F. Miao, W. Wu, S.-Y. Wang, R. S. Williams.

  8. United States Patent US8,207,520, 2012, “Programmable crosspoint device with an integral diode” J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

  9. United States Patent US8,283,649, 2012, “Memristor with a non-planar substrate” A. M Bratkovski, S.-Y. Wang, J. Joshua Yang, M. Stuke.

  10. United States Patent US8,264,868, 2012, “Memory array with metal-insulator transition switching devices” G. M. Ribeiro, Pickett, Matthew, J. Joshua Yang.

  11. United States Patent US8,259,485, 2012, “Multilayer structures having memory elements with varied resistance of switching layers” J. Joshua Yang, J. P. Strachan, W. Wu.

  12. United States Patent US8,294,132, 2012, “Graphene memristor having modulated graphene interlayer conduction” F. Miao, J. Joshua Yang, W. Wu, S.-Y. Wang, R. S. Williams.

  13. United States Patent US8,226,3521, 2012, “Memristors with an electrode metal reservoir for dopants” J. Joshua Yang, W. Yi, M. Stuke, S.-Y. Wang.

  14. United States Patent US8,225,8304, 2012, “Guided mode resonator based raman enhancement apparatus” W. Wu, Q. Xia, J. Li, J. Joshua Yang.

  15. United States Patent US8,226,4724, 2012, “Changing a memristor state” F. Miao, J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

  16. United States Patent USPTO US8,324,976 B2, 2012, “Oscillator circuitry having negative differential resistance” J. Borghetti, M. D. Pickett, G. Medelros-Ribeiro, W. Yi, J. Joshua Yang, M. Zhang.

  17. United States Patent US8,385,101, 2013, “Memory resistor having plural different active materials” J. Joshua Yang, M. Zhang, R. S. Williams.

  18. United States Patent USPTO US8,415,652, 2013, “Memristors with a switching layer comprising a composite of multiple phases” J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

  19. United States Patent USPTO US8,437,172, 2013, “Decoders using memristive switches” M.Fiorentino, W. M. Tong, P. J. Kuekes, J. Joshua Yang.

  20. United States Patent USPTO US8,437,072, 2013, “Individually addressable nano mechanical actuator and contact switch by redox reaction in a crossbar array” J. Joshua Yang, R. S. Williams, W. M. Tong.

  21. United States Patent USPTO US8,450,711, 2013, “Semiconductor memristor devices” R. S. Williams, J. Joshua Yang, D. R. Stewart.

  22. United States Patent USPTO US8,455,852, 2013, “Controlled placement of dopants in memristor active regions” N. J. Quitoriano, P. J. Kuekes, J. Joshua Yang.

  23. United States Patent USPTO US8,487,289, 2013, “Electrically actuated device” J. Joshua Yang, M. Zhang, G. Medelros-Ribeiro.

  24. United States Patent USPTO 8,525,146, 2013, “Electrical circuit component” W. Wu, M. D. Pickett, J. Joshua Yang, Q. Xia, G. Medeiros Ribeiro.

  25. United States Patent USPTO US8,525,553, 2013, “Negative differential resistance comparator circuits” M. D. Pickett, J. Joshua Yang, M. Zhang.

  26. United States Patent USPTO US8,519,372, 2013, “Electroforming-free nanoscale switching device” J. Joshua Yang, S.-Y. Wang, R. S. Williams, A. Bratkovski, G. Medeiros Ribeiro.

  27. United States Patent USPTO US8,530,873, 2013, “Electroforming free memristor and method for fabricating thereof” J. Joshua Yang, G. Medeiros Ribeiro, R. S. Williams.

  28. United States Patent USPTO US8,546,785, 2013, “Memristive device” J. Joshua Yang, F. Miao, W. Wu, S.-Y. Wang, R. S. Williams.

  29. United States Patent USPTO US8,575,585, 2013, “Memristive device” J. Joshua Yang, Q. Xia, A. A. Bratkovski.

  30. United States Patent USPTO US8,570,138, 2013, “Resistive Switches” J. Joshua Yang, D. B. Strukov, S. Y. Wang.

  31. United States Patent USPTO US8,586,959, 2013, “Memristive switch device” M. D. Pickett, J. Joshua Yang, D. B. Strukov.

  32. United States Patent USPTO US8,587,985, 2013, “Memory array with graded resistance lines” J. Joshua Yang, J. P. Strachan, W. Wu, Janice H. Nickel.

  33. United States Patent USPTO US8,710,483 B2, 2014, “Memristive junction with intrinsic rectifier” J. Joshua Yang, J. P. Strachan, M. D. Pickett.

  34. United States Patent USPTO US8,710,865, 2014, “Field-programmable analog array with memristors” J. Joshua Yang, M. S. Qureshi, G. Medeiros-Ribeiro, R. S. Williams.

  35. United States Patent USPTO US8,711,594, 2014, “Asymmetric switching rectifier” M.-X. Zhang, J. Joshua Yang, R. S. Williams.

  36. United States Patent USPTO US8,737,113, 2014, “Memory resistor having multi-layer electrodes” J. Joshua Yang, W. Wu, R Gilberto-Ribeiro.

  37. United States Patent USPTO US8,766,228 B2, 2014, “Electrically actuated device and method of controlling the formation of dopants therein” J. Joshua Yang, D. Stewart, P. J. Kuekes, W. M. Tong.

  38. United States Patent USPTO US8,767,438, 2014, “Memelectronic Device” J. Joshua Yang, B. J. Choi, M. -X. Max Zhang, G. Medeiros-Ribeiro, R. S. Williams.

  39. United States Patent USPTO US8,766,231, 2014, “Nanoscale Electronic Device with Barrier Layers” Wei Yi, J. Joshua Yang, G. Medeiros-Ribeiro.

  40. United States Patent USPTO US8,779,409, 2014, “Low energy memristors with engineered switching channel materials” J. Joshua Yang, M.-X. Zhang, G. Medeiros-Ribeiro, R. S. Williams.

  41. United States Patent USPTO US8,779,848, 2014, “Two terminal memcapacitor device” M. D. Pickett, J. Borghetti, J. Joshua Yang.

  42. United States Patent USPTO US8,891,284, 2014, “Memristors based on mixed-metal-valence compounds” R. S. Williams, J. Joshua Yang,M. D. Pickett, G. Medeiros-Ribeiro, J. P. Strachan.

  43. United States Patent USPTO US8,809,158, 2014, “Device having memristive memory” M. D. Pickett, J. Joshua Yang,G. Medeiros-Ribeiro.

  44. United States Patent USPTO US8,829,581, 2014, “Resistive memory devices” S. Y. Wang, J. Joshua Yang,A. A. Bratkovski, R. S. Williams.

  45. United States Patent USPTO US8,923,034, 2014, “Multi-level memory cell with continuously tunable switching” Y. Wei, F. Miao, J. Joshua Yang.

  46. United States Patent USPTO US8,872,153, 2014, “Device structure for long endurance memristors” J. Joshua Yang, M.-X. Zhang, R.S. Williams.

  47. United States Patent USPTO US8,882,217, 2014, “Printhead assembly including memory elements” P. V. Lea, G. M. Ribeiro, M. D. Pickett, J. Joshua Yang.

  48. United States Patent USPTO US8,879,300, 2014, “Switchable two-terminal devices with diffusion/drift species” J. Joshua Yang, W. Wu, Q. Xia.

  49. United States Patent USPTO US8,878,342, 2014, “Using alloy electrodes to dope memristors” N. J. Quitoriano, D. Ohlberg, P. J. Kuekes, J. Joshua Yang.

  50. United States Patent USPTO US8,890,106, 2014, “Hybrid circuit of nitride-based transistor and memristor” J. Joshua Yang, G. Medeiros-Ribeiro, B. J. Choi, R. S. Williams.

  51. United States Patent USPTO US8,912,520, 2014, “Nanoscale switching device” J. Joshua Yang, M. D. Pickett, G. Medeiros-Ribeiro.

  52. United States Patent USPTO US8,921,960, 2015, “Memristor cell structures for high density arrays” J. Joshua Yang, M. X. Zhang, G. Medeiros-Ribeiro, R. S. Williams.

  53. United States Patent USPTO US9,082,533, 2015, “Memristive element based on hetero-junction oxide” J. Joshua Yang, M. X. Zhang, R. S. Williams.

  54. United States Patent USPTO US9,159,476 B2, 2015, “Negative differential resistance device” J. Joshua Yang, M. X. Zhang, R. S. Williams.

  55. United States Patent USPTO US9,000,411 B2, 2015, “Memristor devices configured to control bubble formation” Z. Li, A. M. Bratkovski, J. Joshua Yang.

  56. United States Patent USPTO US8,766,228, 2014, “Electrically actuated device and method of controlling the formation of dopants therein” J. Joshua Yang, D. R. Stewart, P. J. Kuekes, W. M. Tong.

  57. United States Patent USPTO US9,024,285, 2015, “Nanoscale switching devices with partially oxidized electrodes” J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

  58. United States Patent USPTO US13/881452, 2015, “Memristive devices and memristors with ribbon-like junctions and methods for fabricating the same” H. S. Cho, J. Joshua Yang, J. H. Nickel.

  59. United States Patent USPTO US9,041,157, B2, “Method for doping an electrically actuated device” W. Wu, S. V. Mathai, S-Y. Wang, J. Joshua Yang.

  60. United States Patent USPTO US9,040,948 B2, 2015, “Nanoscale switching device” G. Medeiros-Ribeiro, J. H. Nickel, J. Joshua Yang.

  61. United States Patent USPTO US9,082,972 B2, 2015, “Bipolar resistive switch heat mitigation” J. P. Strachan, G. Medeiros Ribeiro, J. Joshua Yang, W. Yi.

  62. United States Patent USPTO US9,196,354, 2015, “Memory resistor adjustment using feedback control” J. P. Strachan, J. Borghetti, M. D. Pickett, G. Ribeiro, J. Joshua Yang.

  63. United States Patent USPTO US9,184,213, 2015, “Nanoscale switching device” J. Joshua Yang, D. B. Strukov, W. Wu.

  64. United States Patent USPTO US9,184,382, 2015, “Memristive devices with layered junctions and methods for fabricating the same” M. D. Pickett, J. Joshua Yang, G. Medeiros-Ribeiro.

  65. United States Patent USPTO US9,178,153, 2015, “Memristor structure with a dopant source” M. X. Zhang, J. Joshua Yang, R. S. Williams.

  66. United States Patent USPTO US9,171,613, 2015, “Memristors with asymmetric electrodes” A. M. Bratkovski, J. Joshua Yang, S.-Y. Wang, M. Stuke.

  67. United States Patent USPTO US9,165,645, 2015, “High-reliability high-speed memristor” F. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros-Ribeiro, R S. Williams.

  68. United States Patent USPTO US8,982,601 B2, 2015, “Switchable junction with an intrinsic diode formed with a voltage dependent resistor” J. Joshua Yang, J. P. Strachan, J. Borghetti, M. D. Pickett.

  69. United States Patent USPTO US9,224,949 B2, 2015, “Memristive elements that exhibit minimal sneak path current” J. Joshua Yang, M. X. Zhang, R. S. Williams.

  70. United States Patent USPTO US9,257,645 B2, 2016, “Memristors having mixed oxide phases” J. Joshua Yang, M. X. Zhang, F. Miao.

  71. United States Patent USPTO US9,293,200 B2, 2016, “Multilayer memory array” J. H. Nickel, G. Medeiros-Ribeiro, J. Joshua Yang.

  72. United States Patent USPTO US9,331,278 B2, 2016, “Forming memristors on imaging devices” J. Joshua Yang, N. Ge, Z. Li, M. X. Zhang.

  73. United States Patent USPTO US9,276,204 B2, 2016, “Memristor with channel region in thermal equilibrium with containing region” F. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros Ribeiro, R. Stanley Williams.

  74. United States Patent USPTO US9,224,821 B2, 2015, “Customizable nonlinear electrical devices” M. X. Zhang, J. Joshua Yang, G. Medeiros Ribeiro, R. S. Williams.

  75. United States Patent USPTO US 2014/0112059 A1, 2016, “High-reliability high-speed memristor” F. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros Ribeiro, R. S. Williams.

  76. United States Patent USPTO US9,508,928 B2, 2016, “Nanochannel array of nanowires for resistive memory devices”S.-Y. Wang, J. Joshua Yang.

  77. United States Patent USPTO US9,558,869, 2017, “Negative differential resistance device” J. Joshua Yang, M. Zhang, R. S. Williams.

  78. United States Patent USPTO US9,847,124, B2, 2017, “Resistive elements to operate as a matrix of probabilities”, M. Hu, J. P. Strachan, G. Ning, J. Joshua Yang.

  79. United States Patent USPTO US9,847,378, B2, 2017, “Resistive memory devices with a multi-component electrode” X. Sheng, Y. Jeon, J. Joshua Yang, H. S. Cho, R. H. Henze.

  80. United States Patent USPTO US9,776,400, B2, 2017, “ Printhead with a number of memristor cells and a parallel current distributor” N. Ge, J. Joshua Yang, Z. Li.

  81. United States Patent USPTO US9,701115, B2, 2017, “Printheads having memories formed thereon” J. Joshua Yang, N. Ge, Z. Li.

  82. United States Patent USPTO US9, 793,322, B2, 2017, “Apparatus having first and second switching materials” N. Ge, J. Joshua Yang, R. S. Williams, K. M. Kim.

  83. United States Patent USPTO US9,793,473, B2, 2017 “Memristor structures” S. Y. Wang, J. Joshua Yang, M. M. Zhang, A. M. Bratkovski.

  84. United States Patent USPTO US9,885,937, B2, 2018, “Dynamical optical crossbar array” J. Joshua Yang, A. M. Bratkovski, D. A. Fattal, M. Zhang.

  85. United States Patent USPTO US9,870,822, B2, 2018, “Non-volatile memory element with thermal-assisted switching control” G. Ning, J. Joshua Yang, Z. Li.

  86. United States Patent USPTO US9,947,405, B2, 2018 “Memristive dot product engine with a nulling amplifier” J. P. Strachan, G. E. Montgomery, N. Ge, M. Hu, J. Joshua Yang.

  87. United States Patent USPTO US9,911,789, B2, 2018 “1-Selector n-Resistor memristive devices” J. Joshua Yang, G. Gibson, Z. Li.

  88. United States Patent USPTO US9,911,490, B2, 2018 “Memory controllers” N. Ge, J. Joshua Yang, F. Perner, J. H. Nickel.

  89. United States Patent USPTO US9, 889,659, B2, 2018 “Printhead with a memristor” N. Ge, J. Joshua Yang, M. Zhang.

  90. United States Patent USPTO US9,934,852 B2, 2018 “Sensing an output signal in a crossbar array based on a time delay between arrival of a target output and a sneak output” K. M. Kim, N. Ge, J. Joshua Yang.

  91. United States Patent USPTO US9, 911,915 B2, 2018 “Multiphase selectors” J. Joshua Yang, Y. Jeon, H. S. Cho.

  92. United States Patent USPTO US9,934,849 B2, 2018 “Asymmetrically selecting memory elements” K. M. Kim, J. Joshua Yang, Z. Li.

  93. United States Patent USPTO US9, 911,788 B2, 2018 “Selectors with oxide-based layers” J. Joshua Yang, Ning Ge, Zhiyong Li.

  94. EP 2,842,163 B1, 2018 “Nonlinear memristors” J. Joshua Yang, M. Zhang, M. D. Pickett, R. S. Williams.

Pending Patents

  1. US-2011121359-A1, "Multi-Layer Reconfigurable Switches ", J. Joshua Yang, Julien Borghetti, Duncan Stewart, R. Stanley Williams.

  2. WO-2011005266-A1, "Memristive junction with intrinsic rectifier ", J. Joshua Yang, John Paul Strachan, Matthew D. Pickett.

  3. US-2012012809-A1, "Switchable Junction with Intrinsic Diodes with Different Switching Threshold ", J. Joshua Yang, Shih-Yuan(SY) Wang, R. Stanley Williams.

  4. US-2012164745-A1, "Nanofinger device with magnetizable portion ", Kai-Mei Camilla Fu, J. Joshua Yang, Fung Suong Ou.

  5. WO-2012057772-A1, "Memristive devices and memristors with ribbon-like junctions and methods for fabricating the same ", Hans S. Cho, J. Joshua Yang.

  6. US-2013026434-A1, "Memristor with controlled electrode grain size ", J. Joshua Yang, John Pual Strachan, Matthew D. Pickett, R. Stanley Williams.

  7. WO-2011008195-A2, "Memristive device ", J. Joshua Yang, Qiangfei Xia, Alexandre M . Bratkovski.

  8. WO-2012177265-A1, "High-reliability high-speed memristor ", Feng Miao, J. Joshua Yang, John Paul Strachan, Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams.

  9. US-2012001017-A1, "Installation platform for deploying an earth-based sensor network utilizing a projected pattern from a height ", John Paul Strachan, Wei Yi, J. Joshua Yang.

  10. US-2012074378-A1, "Memory element having elastically deformable active region ", Wei Wu, J. Joshua Yang, Zhiyong Li, Shih-Yuan Wang, Dmitri Strukov, Alexandre Bratkovski.

  11. WO-2011028208-A1, "Memristors based on mixed-metal-valence compounds ", R. Stanley Williams, J. Joshua Yang, Matthew Pickett, Gilberto Ribeiro, John Paul Strachan.

  12. WO-2011096940-A1, "Memory resistor having multi-layer electrodes ", J. Joshua Yang, Wei Wu, Gilberto Ribeiro.

  13. US-2017178725-A1, "Memristive dot product engine for vector processing ", J. Joshua Yang, Miao Hu, John Paul Strachan, Ning Ge.

  14. US-2012018698-A1, "Low-power nanoscale switching device with an amorphous switching material ", J. Joshua Yang, R. Stanley Williams, Gilberto Ribeiro.

  15. US-2016254448-A1, "Nonlinear memristor devices with three-layer selectors ", Byungjoon Choi, J. Joshua Yang, R. Stanley Williams, Gary Gibson, Warren Jackson.

  16. US-2012313070-A1, "Controlled switching memristor ", R. Stanley Williams, Gilberto Medeiros Ribeiro, Dmitri Borisovich Strukov, J. Joshua Yang.

  17. US-2014158973-A1, "Nitride-based memristors ", J. Joshua Yang, Gilberto Medeiros Ribeiro, R. Stanley Williams.

  18. US-2013234103-A1, "Nanoscale switching device with an amorphous switching material ", J. Joshua Yang, R. Stanley Williams, Gilberto Medeiros Ribeiro.

  19. US-2017125674-A1, "Mulatiphase selectors ", J. Joshua Yang, Yoocharn Jeon, Hans S. Cho.

  20. US-2017316828-A1, "Double bias memristive dot product engine for vector processing ", Miao Hu, J. Joshua Yang, John Paul Strachan, Ning Ge.

  21. US-2016315256-A1, "V-shape resistive memory element ", Ning Ge, J. Joshua Yang, Chaw Sing Ho.

  22. US-2017271409-A1, "Resistive memory devices and arrays ", J. Joshua Yang, Ning Ge, Katy Samuels, Minxian Max Zhang.

  23. US-2016028005-A1, "Memristor structure with a dopant source ", Minxian Max Zhang, J. Joshua Yang, R. Stanley Williams.

  24. US-2017271406-A1, "Superlinear selectors ", J. Joshua Yang, Gary Gibson, Zhiyong Li.

  25. US-2016351802-A1, "Nonlinear dielectric stack circuit element ", Warren Jackson, Gary Gibson, R. Stanley Williams, J. Joshua Yang.

  26. US-2017323677-A1, "Memcapacitive cross-bar array for determining a dot product ", Ning Ge, John Paul Strachan, J. Joshua Yang, Miao Hu.

  27. US-2016043312-A1, "Memristors with dopant-compensated switching ", J. Joshua Yang, Minxian Max Zhang, Gilberto Medeiros Ribeiro, R. Stanley Williams.

  28. US-2017243109-A1, "Device with multiple resistance switches with different switching characteristics ", Miao Hu, J. Joshua Yang, Ning Ge.

  29. US-2017141160-A1, "Protective elements for non-volatile memory cells in crossbar arrays ", Minxian Max Zhang, J. Joshua Yang, R. Stanley Williams.

  30. US-2017271408-A1, "Memory cell with a multi-layered selector ", J. Joshua Yang, Ning Ge, Zhiyong Li, Richard H. Henze.

  31. US-2017271589-A1, "Resistive memory arrays with a negative temperature coefficient of resistance material ", Minxian Max Zhang, J. Joshua Yang, Zhiyong Li, R. Stanley Williams.

  32. US-2017229170-A1, "Generating a representative logic indicator of grouped memristors ", Ning Ge, J. Joshua Yang, Zhiyong Li, R. Stanley Williams.

  33. US-2017243924-A1, "Negative differential resistance (ndr) device based on fast diffusive metal atoms ", J. Joshua Yang, Stanley Williams, Max Zhang, Zhiyong Li.

  34. US-2017279042-A1, "Fast erasing memristors ", Ning Ge, J. Joshua Yang, Minxian Zhang.

  35. US-2011260134-A1, "Thermally Stable Nanoscale Switching Device ", J. Joshua Yang, Stanley Williams, Julien Borghetti, John Paul Strachan.

  36. US-2017271009-A1, "Selector relaxation time reduction ", J. Joshua Yang, Ning Ge, John Paul Strachan, Gary Gibson, Warren Jackson.

  37. US-2016225823-A1, "Switching resistance memory devices with interfacial channels ", Shih-Yuan Wang, J. Joshua Yang, R. Stanley Williams.

  38. US-2013271442-A1, "Flat-panel display including memristive devices ", Wendi Li, Wei Yi, Wei Wu, J. Joshua Yang.

  39. US-2017250223-A1, "A resistive random-access memory in printed circuit board ", Ning Ge, Vincent Nguyen, J. Joshua Yang, Chanh Hua, Lidia Warnes, David B. Fujii.

  40. US-2017271591-A1, "Multilayered memristors ", Warren Jackson, J. Joshua Yang, Kyung Min Kim, Zhiyong Li.

  41. US-2017358352-A1, "Nonvolatile memory cross-bar array ", Ning Ge, J. Joshua Yang, John Paul Strachan, Miao Hu.

  42. US-2017279044-A1, "Memristors with oxide switching layers ", Ning Ge, J. Joshua Yang, Zhiyong Li, Minxian Zhang, Katy Samuels.

  43. US-2017316827-A1, "Memristive cross-bar array for determining a dot product ", Ning Ge, J. Joshua Yang, John Paul Strachan, Miao Hu.

  44. WO-2010110803-A1, "Switchable junction with intrinsic diode ", J. Joshua Yang, Dmitri Borisovich Strukov, R. Stanley Williams.

  45. WO-2016014082-A1, "Printhead with a number of memristor cells and a number of firing cells coupled to a shared fire line ", Ning GE, J. Joshua Yang, Zhiyong Li.

  46. WO-2016163978-A1, "Electrically conducting oxygen diffusion barriers for memristors and selectors ", Katy SAMUELS, Minxian Max Zhang, J. Joshua Yang.

  47. WO-2016153516-A1, "Resistance memory devices including cation metal doped volatile selectors and cation metal electrodes ", Ning GE, J. Joshua Yang, Zhiyong Li.

  48. WO-2016164049-A1, "Temperature compensation circuits ", Ning GE, J. Joshua Yang, Miao HU, John Paul Strachan.

  49. WO-2016014083-A1, "Printhead with a number of vertical oxide memristors having a sacrificial dielectric layer ", Ning GE, J. Joshua Yang, Zhiyong Li, R. Stanley Williams.

  50. WO-2016175744-A1, "Memristive crossbar array having multi-selector memristor cells ", Ning GE, J. Joshua Yang, Zhiyong Li, R. Stanley Williams.

  51. WO-2015167477-A1, "Printhead for depositing fluid onto a surface ", Ning GE, J. Joshua Yang, Zhiyong Li.

  52. WO-2016122524-A1, "Transparent memristive device ", Steven Barcelo, Ning GE, J. Joshua Yang, Max ZHANG.

  53. WO-2012105955-A1, "Negative differential resistance device ", J. Joshua Yang, Minxian ZHANG, R. Stanley Williams.

  54. WO-2016182562-A1, "Non-volatile resistance memory devices including a volatile selector ", Minxian Max Zhang, J. Joshua Yang, R. Stanley Williams, Katy SAMUELS, Zhiyong Li.

  55. WO-2016014087-A1, "Printhead with a number of top electrode-enclosed memristors ", Ning GE, J. Joshua Yang, Lu Zhang, Sity Lam, Max ZHANG.

  56. WO-2016122525-A1, "Hamming distance computation ", Ning GE, J. Joshua Yang, Zhiyong Li, Stanley Williams.

  57. WO-2016018198-A1, "Printhead with a number of memristors having metal-doped metalorganic switching oxides ", J. Joshua Yang, Ning GE, Lu Zhang.

  58. WO-2016153461-A1, "Memristive device with doped sol-gel switching layer ", Ning GE, J. Joshua Yang, Steven Barcelo, Zhiyong Li, Hou T. Ng.

  59. WO-2016153513-A1, "Code comparators ", Ning GE, J. Joshua Yang, Zhiyong Li, R. Stanley Williams.

  60. WO-2016175742-A1, "Dynamic logic memcap ", Ning GE, Zhiyong Li, J. Joshua Yang, Stanley Williams.

  61. WO-2016014085-A1, "Printhead with a number of memristors disposed on enclosed gate transistors ", Ning GE, J. Joshua Yang, Zhiyong Li.

  62. WO-2016068872-A1, "Printhead with memristors having different structures ", Ning GE, J. Joshua Yang, Zhiyong Li, R. Stanley Williams.

  63. WO-2015167495-A1, "Printhead with an off-chip memristor assembly ", Ning GE, J. Joshua Yang, Zhiyong Li, Max ZHANG.

  64. WO-2011123115-A1, "Nanoscale switching device ", Janice H. Nichel, Gilberto Medeiros Ribeiro, J. Joshua Yang.

  65. WO-2016153515-A1, "Resistance memory devices including cation metal doped volatile selectors ", J. Joshua Yang, Ning GE, Zhiyong Li, Katy SAMUELS.

  66. WO-2016068833-A1, "Head with a number of silicon nitride non-volatile memory devices ", Zhiyong Li, Ning GE, J. Joshua Yang, Max ZHANG.

  67. WO-2016068841-A1, "Printhead with a number of high resistance ratio memristors ", Ning GE, J. Joshua Yang, Zhiyong Li, Max ZHANG.

Invited Tlaks

    International conferences:

  1. The 10th Non-volatile memory technology symposium (NVMTS09), 2019, Portland, Oregon.

  2. “Oxide based memristive nanodevices”, 2009, International Conference on Communications, Circuits and Systems 2009 (ICCCAS 2009) San Jose, California.

  3. “Metal/oxide/metal memristive devices”, 2009, The 7th International Conference on Advanced Materials and Devices (ICAMD 2009), Jeju island, KOREA.

  4. “Engineering control and applications of oxide based nano-switches”, 2010, International Symposium on Integrated Functionalities ( ISIF 2010), San Juan, Puerto Rico.

  5. “Engineering control over device properties of memristors for immediate applications”, 2010, Julius Springer Forum on Applied Physics, Stanford University, CA.

  6. “Promises and challenges of Memristive switches”, 2011, 11th Non-Volatile Memory Technology Symposium, Shanghai, China. (Keynote)

  7. “Oxide based memristive devices”, 2012, IEEE International Conference on Solid-State and Integrated Circuit Technology, 2012, Xi'an, China.

  8. “TaOx based memristive devices”, 2012, 12th Non-Volatile Memory Technology Symposium, Singapore.

  9. “Memristive nanodevices for computing”, 2013, The 57th International Conference on Electron, Ion, Photon Beam Technology and Nanofabrication (EIPBN), Tennessee.

  10. “Memristive Devices for Computing”, 2013, The 224th Electrochemical Society Meeting, ULSI Process Integration Symposium, San Francisco, California. (Keynote)

  11. “Memristive Nanodevices”, Nano and Giga 2014, Phoenix, Arizona.

  12. “Challenges and Materials Solutions for Memristive Devices (ReRAM)”, MRS Spring 2014, San Francisco, California.

  13. “The material perspective ReRAM” The IEEE International Symposium on Circuits and Systems (ISCAS), FEST 2014, Melbourne, Australia. (Keynote)

  14. “Tutorial on Memristive devices” the 29th Symposium on on Microeletronics Technology and Devices, 2014 (SBMICRO 2014, Chip in Aracaju), Aracaju, Brazil.

  15. “Challenges and solutions of memristors for Neuromorphic Computing” the International Symposium on Neuromorphic Systems and Cyborg Intelligence, 2014, Hangzhou, China.

  16. “Materials Perspective of Memristive Devices”, IEEE International Conference on Solid-State and Integrated Circuit Technology, 2014, Guilin, China.

  17. “Challenges and Solutions for Memristive Devices”, The AVS 61st International Symposium & Exhibition, 2014, Baltimore, Maryland.

  18. “RRAM tutorial”, MRS Fall Meeting 2014, Boston, Mssachusetts.

  19. “Memristive Devices (ReRAM): Challenges and Possible Solutions”,MRS Fall Meeting 2015, Boston, Mssachusetts.

  20. “Promises and challenges of memristive devices”,15th INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE Nano 2015)2015, Rome, Italy.

  21. “Memristive nanodevices for computing - challenges and solutions”, China Semiconductor Technology International Conference 2015 (IEEE CSTIC 2015)2015, Shanghai, China.

  22. “Challenges and possible solutions for memristive devices”,15th Non-Volatile Memory Technology Symposium (IEEE NVMTS 2015),2015 Beijing, China.

  23. “Engineering interfaces for memristive devices”, the 43rd Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-43), Palms Springs, CA, 2016.

  24. “Materials issues in memristive devices”,145th TMS annual meeting, 2016, Nashville, Tennessee.

  25. “Different applications of memristors enabled by selector devices”,China Semiconductor Technology International Conference (CSTIC), 2016, Shanghai, China. (Keynote)

  26. “Memristor Mate devices”,International Workshop on Information Storage/10th International Symposium on Optical Storage (IWIS/ISOS 2016),Changzhou, China.(Keynote)

  27. “A versatile two-terminal device enables different applications of resistance switches” The IEEE International Symposium on Circuits and Systems (ISCAS), 2016, Montréal, Canada.

  28. “Challenges and solutions for memristors used for memory and neuromorphic computing”,16thNon-Volatile Memory Technology Symposium (IEEE NVMTS 2016),2016 Pittsburg, Pennsylvania.

  29. “Engineered materials for memristor mate” International Conferences on Modern Materials and Technologies (CIMTEC), 2016, Perugia, Italy.

  30. “Engineered materials for memristor mate” 58th Electronic Materials Conference (EMC), 2016, Newark, Delaware.

  31. “non-volatile memories” 230th Meeting of Electrochemical Society (ECS), 2016, Honolulu, Hawaii.

  32. “Memristors with diffusive relaxation dynamics for neuromorphic computing”, IEEE 13th International Conference on Solid-State and Integrated Circuit Technology (ICSICT),2016, Hangzhou, China.

  33. “Memristors with diffusive relaxation dynamics for neuromorphic computing”, 16th Non-Volatile Memory Technology Symposium, 2016, Pennsylvania, USA.

  34. “Emerging Materials and Technologies for Nonvolatile Memories”,MRS Fall Meeting 2016, Boston, Massachusetts.

  35. “Challenges and solutions for memristors used for memory and neuromorphic computing”,MRS Spring Meeting 2017, Phoenix, Arizona.

  36. “Challenges and solutions for memristors used for memory and neuromorphic computing”, Collaborative Conference on Materials Research (CCMR), 2017, Jeju Island, South Korea.

  37. “Diffusive memristors for future computing”,China Semiconductor Technology International Conference (CSTIC), 2017, Shanghai, China. (Keynote)

  38. “Diffusive Memristors” 1st International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Athens, Greece (2017). (Plenary)

  39. “Diffusive Memristors for Computing”, The 21st International Conference on Solid State Ionics (SSI-21), 2017, Padua, Italy.

  40. “RRAM/memristor for computing” International Symposium on Memory Devices for Abundant Data Computing, Hongkong, (2017) (Plenary).

  41. “Diffusive Memristors as Artificial Synapses and Neurons for Neural Networks”, MRS Fall Meeting 2017, Boston, Massachusetts.

  42. “Diffusive memristor as an oscillatory neuron for brain inspired computing”, XXVI International Materials Research Congress, 2017, Cancun, Mexico.

  43. “Bio-inspired computing with memristive devices”, Neurotalk 2018, Bangkok, Thailand.

  44. “Neuromorphic computing with memristive devices and arrays”, Compound Semiconductor Week (CSW2018), 2018, MIT, Cambridge, USA.

  45. “Diffusive memristor for computing”, The IEEE International Symposium on Circuits and Systems (ISCAS), 2018, Florence, Italy.

  46. “Diffusive Memristors for computing”, International Conference on Memristive Materials, Devices & Systems (MEMRISYS), 2018, Beijing, China.

  47. “Neuromorphic computing with memristors”, Nature Conference on Flexible Electronics-Visions of a Flexible Future, 2018, Xi'an, China. (Keynote)

  48. “Experimental demonstrations of unconventional computing with memristive devices”, the International Conference on Neuromorphic Systems, 2018, Knoxville, Tennessee.

  49. “Memristive materials and applications”, The 3rd International Conference on New Material and Chemical Industry (NMCI2018), Sanya, China (2018). (Keynote)

  50. “Unconventional computing with memristive devices and arrays” AiMES 2018, Cancun, Mexico.

  51. “Unconventional computing with memristive neural network”, China Semiconductor Technology International Conference (CSTIC), 2018, Shanghai, China.

  52. “Unconventional computing with memristive devices and arrays” ACS Presidential Symposium, 256th ACS National Meeting, Boston, MA.

  53. “Diffusive memristor for computing”, The 6th Memristor and Memristive Symposium, Budapest, Hungary (2018). (Plenary)

  54. “Unconventional computing with resistive switching devices”, International Emergent Memory Symposium (IEMS-2018), 2018, Ji'an, China. (Plenary)

  55. International workshops:

  56. “The memristor at age 40”, International Symposium on Materials for Enabling Nanodevices, 2010, UCLA, California. (Plenary talk)

  57. “Applications and property engineering of memristive nanodevices”, Advances in nonvolatile memory materials and devices, 2010, Suzhou, China.

  58. “Recent progress on oxide based memristive devices in HP”, 2011, Non-volatile memories worshop, University of California - San Diego, California.

  59. “Oxide based memristive devices”, Frontier of Functional-Oxide Nano Electronics workshop, 2011, Tsukuba, Japan.

  60. “TaOx Memristive Nano-devices: Mechanism, Applications and Challenges”, Advanced Memory Workshop, 2012, NCCAVS Thin Film Users Group, California.

  61. “The Memristor” LASERION international workshop, 2013, Munich, Germany.

  62. “Memristive Devices for Computing” Global Forum on Nanoelectronic Manufacturing: From Materials to Systems, 2014 Mumbai, India.

  63. “Memristive nanodevices for computing - challenges and solutions”, International workshop Advances in ReRAM: Materials and Interfaces 2015, Crete, Greece.(Keynote)

  64. “Experimental demonstration of analog computing and neuromorphic computing with memristor crossbar arrays” Energy Consequences of Information Workshop, 2017 Santa Fe, New Mexico.

  65. “Unconventional computing using neural network based memristors”, The 2017 Stephen and Sharon Seiden Frontiers in Engineering &; Science Workshop: “Beyond CMOS: From Devices to Systems”, 2017, Haifa, Isreal.

  66. “Memristive devices for neuromorphic computing”, the 2017 APS/CNM Users Meeting, 2017, Argonne National Labs, Illinois.

  67. “Experimental demonstration of analog computing and neuromorphic computing with memristor crossbar arrays”, 2017 Energy Consequences of Information (ECI), 2017, Santa Fe, NM.

  68. “Diffusive Memristor based Neural Networks”, International Workshop on Future Computing (IWoFC), 2017, Beijing, China.

  69. “Challenges and possible solutions for RRAM based computing”, the 7th International Workshop on Resistive Switching Memory, 2017, Leuven, Belgium.

  70. “Opportunities and Challenges of Memristive Electroceramics for Computing”, Frontiers In Electroceramics Workshop, 2017, MIT, Massachusetts.

  71. “Resistive/memristive switching devices for computing”, IEEE-IRDS Beyond CMOS Workshop, 2017, Albuquerque, NM.

  72. Seminar:

  73. “Resistance Memory Nanoelectronics”, May/2009, Invited Lecture, UCSC-NASA Ames Research Center, Mountain View, California.

  74. “Oxide based memristive junctions: switching, forming and device family”, 2009, Seminar, University of California, Santa Cruz, California.

  75. Seminar, 2009, Seoul National University, Korea.

  76. “Memristive Nanodevices”, 2010, Seminar, Peking University, Beijing, China.

  77. “Oxide based nanoswitches”, 2010, Seminar, Chinese Academy of Science, Beijing, China.

  78. “Memristors in Computing: Promises and Challenges”, 2011, seminar, IEEE Computer Society, San Jose California.

  79. “Metal oxide based nonvolatile memories - promises and challenges”, 2011, IEEE Electronic Device Society, Santa Clara, California.

  80. “Memristive Nanodevices: mechanism, promises and challenges”, 2012, Seminar, University of Pittsburgh, Pittsburgh, Pennsylvania.

  81. “Oxide based Memristive Nanodevices”, 2012, Seminar, Michigan State University, East Lansing, Michigan.

  82. “Mermistor technology development”, 2012, seminar, Finisar corp. Sunnyvale California.

  83. “Memristive Nanodevices: Mechanisms, Applications and Challenges”, 2012, IEEE SINGAPORE REL/CPMT/ED CHAPTER, Singapore.

  84. “Memristive Devices for Computing”, 2013, IEEE SCV Electron Devices Society, Santa Clara, California.

  85. “Memristive nanodevices: mechanisms, promises and challenges”, 2013, seminar, University of California, Berkeley, California.

  86. Special Lecture, AirForce Research Lab, Rome, New York (2013). (Chief Scientist Lecture Series)

  87. “Memristive materials and Devices”, 2014, Seminar, Tsinghua University, Beijing, China.

  88. “Resistance switching: applications, mechanisms and challenges”, 2015, Seminar, HGST, San Jose, California.

  89. “Challenges and solutions for memristors used for memory and neuromorphic computing”,2016, seminar, Chinese Academy of Science, Beijing.

  90. “Memristor applications enabled by selectors”,2016, seminar, Tsinghua University, Beijing.

  91. “Diffusive memristor as synaptic emulators for neuromorphic computing”,2016, seminar, Peking University, Beijing.

  92. “Memristive devices for computing”, 2017, Micro-Nano Seminar Series, MIT, Boston.

  93. “Memristors for computing”, 2017, seminar, Huazhong University of Science and Technology, Wuhan, China.

  94. “Memristive devices for computing: applicsations, challenges and possible solutions”, 2017, seminar, SUSTC, Shenzhen, China.

  95. “Unconventional computing with memristive devices and arrays”, 2018, Northwestern MRSEC Seminar, Northwestern University, USA.

  96. “Unconventional computing with memristive devices and arrays”, 2018, NIST, Gaithersburg, Maryland.

  97. “Neuromorphic computing with memristor crossbar arrays”, 2018, Applied Physics colloquium, Harvard University, Boston.

People

Principal Investigator

Jianhua (Joshua) Yang, Professor

Jianhua (Joshua) Yang, Ph. D, Professor

Dr. Yang is a professor in the Department of Electrical and Computer Engineering at the University of Massachusetts, Amherst. He spent over 8 years at HP Labs before joining UMass in 2015. His current research interests are Nanoelectronics and Nanoionics, especially for energy and computing applications, where he authored and co-authored over 130 papers in peer-reviewed academic journals, and holds 94 granted and over 60 pending US Patents. He obtained his B.A. degree in mechanical engineering from Southeast University in China and PhD from the University of Wisconsin – Madison in Material Science Program in 2007.

He is a co-chair of the RRAM session of IEDM 2014. He was the chair of the 8th IEEE Nanotechnology SFBA Council Symposium on “Emerging Non-volatile Memory Technologies” and also the chair of the 10th symposium on “The Promise and Progress of Nanotech Enabled 2D Devices and Materials. He has guest-edited 6 journal special issues on Memory or unconventional computing. He was named as a Spotlight Scholar of UMass Amherst in 2017.





Postdoctoral Fellow

Zhongrui Wang, Ph. D

(Co-supervised with Prof. Q. Xia)
Ph.D., Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 2014

JungHo Yoon, Ph.D

Ph.D., Department of Materials Science and Engineering, Seoul National University, Korea, 2015
Current: Argon national laboratory, USA

Yibo Li, Ph. D

(Co-supervised with Prof. Q. Xia)
Ph.D., Department of Electrical Engineering, The University of Toledo, USA, 2016

 

Ph.D student

Mingyi, Rao

M.S., Microelectronics,
Fudan University, Shanghai, China, 2015
B.S., Microelectronics,
Fudan University, Shanghai, China, 2012

Navnidhi Kumar Upadhyay

M.E., Electronic Systems
Indian Institute of Technology, Bombay, India, 2015
B.E., Electronics and Communication Engineering
National Institute of Science and Technology, Berhampur, India, 2010

Shiva Asapu

M.E., Electrical Engineering
Indian Institute of Technology, Kanpur, India, 2016
B.E., Electrical Engineering
Indian Institute of Technology, Kanpur, India, 2014

Ye Zhuo

B.S., Physics,
University of Science and Technology of China, Hefei,
China, 2016

Rivu Midya

B.S., Electronics and Communication
West Bengal University of Technology, India, 2014
M.S., ECE, UMass Amherst, 2016

Wenhao Song

B.S., Science and Technology of Electronic information
Beijing Normal University, Beijing, China, 2014

 

Undergraduate student

Siyu Wu

B.S., ECE UMass, Amherst, 2015

 

Visiting student

Ph.D student

Peng Yan

M.E., Microelectronics and Solid-state Electronics,
Huazhong University of Science and Technology,
Wuhan, China, 2013

B.E., Electronic Science and Technology,
Huazhong University of Science and Technology, Wuhan, China, 2012

 

Former members

Saumil Joshi, Ph. D

Ph.D., Department of Electrical Engineering,
University of Colorado at Boulder, USA, 2015
Current: Micron Technology, USA

Yunning Li

B.S., Microelectronics
Soochow University, China, 2010
Current: Goodix technology, China

Krishna Rajan

Department Of Applied Science and Technology
Politecnico Di Torino
Turin, Italy
Center for Space Human Robotics,
Italian Institute Of Technoloy, Italy, Torino,10139

Ziqi Zhang

Precision Instrument Engineering Department
Tianjin University

Yingjie Wu

Precision Instrument Engineering Department
Tianjin University

Group activityies

Sept 2014, Dr. Moon Hyung Jang and Dr. Zhongrui Wang joined Prof. Yang and Prof. Xia’s group.

Jan 18 2015, Prof. J. Joshua Yang officially joined the ECE department at UMass Amherst.

Feb 5 2015, J. C. Davis joined the group as a undergraduate student.

April 9 2015, Dr. Saumil Joshi joined the group as a postdoc researcher.

Aug 22 2015, Navnidhi Kumar Upadhyay joined the group as a Ph. D student.

Aug 23 2015, Dr. Jungho Yoon joined the group as a postdoc researcher.

Sept 2 2015, Mingyi Rao joined the group as a Ph. D student.

Aug 2016, Shiva and Ye Zhuo joined the group as Ph. D students.

Sept 2016, Peng Yan joined the group as visiting Ph. D student.
Dec. 3017 Yunning Li, Master Thesis defense.

Dec. 2017, Group New Year Celebrations.

J.J Yang at M5, Umass

Saumil's farewell, 2016
The 1st UMass/MIT joint workshop on neuromorphic computing, UMass Amherst, Aug 2017.
Yunning's farewell, 2017
Group yearly party at J.J. Yang's hourse, Amherst, Jan 2018

Group News

  1. Aug 2017, the 1st UMass/MIT joint workshop on neuromorphic computing, UMass Amherst.



  2. Feb 2018, the 2nd UMass/MIT joint workshop on neuromorphic computing, MIT, Cambridge.

Contact Us

We have immediate openings for Research Assistants (Ph. D students) and postdoctoral researchers;

Candidates with Materials Science, Physics, EE and Chemistry etc. background are welcome to apply!

Jianhua (Joshua) Yang, Professor

  • 413-5454514
  • jjyang@umass.edu
  • The Department of Electrical and Computer Engineering
    University of Massachusetts, Amherst
    201G Marcus Hall
    100 Natural Resources Rd
    Amherst MA 01003-9292